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NVTR4502PT1G  

Single FETs, MOSFETs

The NVTR4502PT1G is a high-performance, single-channel, high-side current sensor from ON Semiconductor. It is designed to provide accurate and reliable current sensing in a wide range of applications, including motor control, power management, and battery monitoring.

Description:

The NVTR4502PT1G is a monolithic current sensor that uses a proprietary current mirror to provide an output voltage proportional to the current flowing through the sensing element. It features a high accuracy of ±1.5% over a wide temperature range of -40°C to +125°C. The device is available in a compact SOIC-8 package, making it suitable for space-constrained applications.

Features:

1. High accuracy: ±1.5% over a wide temperature range
2. Wide operating temperature range: -40°C to +125°C
3. Low output offset voltage: 2.5 mV typ
4. High bandwidth: 100 kHz typ
5. Wide supply voltage range: 4.5 V to 5.5 V
6. Small package size: SOIC-8
7. High-side sensing
8. Low thermal drift
9. High output voltage linearity
10. Low power consumption

Applications:

1. Motor control
2. Power management
3. Battery monitoring
4. Solar panel monitoring
5. Electric vehicle charging systems
6. Uninterruptible power supply (UPS) systems
7. Inverter systems
8. Power conversion and distribution systems
9. Energy storage systems
10. Any application requiring accurate and reliable current sensing

In summary, the NVTR4502PT1G is a high-performance current sensor that offers high accuracy, a wide operating temperature range, and low power consumption. It is suitable for a wide range of applications, including motor control, power management, and battery monitoring.

NVTR4502PT1G Documents

Download datasheets and manufacturer documentation for NVTR4502PT1G

PCN Assembly/Origin :

Compound Qualification 23/Jun/2019      

Datasheets :

N(V)TR4502P      

HTML Datasheet :

N(V)TR4502P      

PCN Design/Specification :

SOT23 27/Sep/2016      

Environmental Information :

onsemi RoHS       Material Declaration NVTR4502PT1G