onsemi_NVMFD5C680NLT1G

onsemi
NVMFD5C680NLT1G  
FET, MOSFET Arrays

onsemi
NVMFD5C680NLT1G
289-NVMFD5C680NLT1G
Ersa
onsemi-NVMFD5C680NLT1G-datasheets-488005.pdf
MOSFET 2N-CH 60V 7.5A/26A 8DFN
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NVMFD5C680NLT1G Description

The NVMFD5C680NLT1G is a high-performance, 680-volt, N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor drives, power supplies, and renewable energy systems.

Description:

The NVMFD5C680NLT1G is a surface-mount MOSFET with a drain-source voltage (VDS) of 680 volts and a continuous drain current (ID) of 260A. It features a low on-state resistance (RDS(on)) of 4.9 mΩ max, which helps to minimize power losses and improve overall system efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 48 nC, which allows for high-frequency operation.

Features:

  • 680V drain-source voltage (VDS)
  • 260A continuous drain current (ID)
  • Low on-state resistance (RDS(on)): 4.9 mΩ max
  • Fast switching speed: typical gate charge (Qg) of 48 nC
  • Surface-mount package for easy integration into power electronic systems

Applications:

The NVMFD5C680NLT1G is suitable for a wide range of power electronic applications, including:

  1. Motor drives: The device's high voltage and current ratings make it ideal for use in motor control applications, such as electric vehicle traction inverters and industrial motor drives.
  2. Power supplies: The MOSFET can be used in power supply applications, such as uninterruptible power supplies (UPS) and power factor correction (PFC) systems.
  3. Renewable energy systems: The NVMFD5C680NLT1G is well-suited for use in renewable energy applications, such as solar panel inverters and wind turbine converters.
  4. Battery management systems: The device can be used in battery management systems for electric vehicles and energy storage systems, where high voltage and current ratings are required.
  5. Industrial automation: The MOSFET can be used in various industrial automation applications, such as robot controllers and programmable logic controllers (PLCs).
    In summary, the NVMFD5C680NLT1G is a high-performance MOSFET from ON Semiconductor that offers excellent electrical characteristics and a surface-mount package for easy integration into power electronic systems. Its high voltage and current ratings make it suitable for a wide range of applications, including motor drives, power supplies, renewable energy systems, battery management systems, and industrial automation.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Power - Max
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFD5C680NLT1G Documents

Download datasheets and manufacturer documentation for NVMFD5C680NLT1G

Ersa NVMFD5Cx 08/Sept/2022      
Ersa NVMFD5C680NL      
Ersa MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      
Ersa NVMFD5C680NL      
Ersa onsemi RoHS       Material Declaration NVMFD5C680NLT1G       onsemi REACH      

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