onsemi_NVMFS5113PLT1G

onsemi
NVMFS5113PLT1G  
Single FETs, MOSFETs

onsemi
NVMFS5113PLT1G
278-NVMFS5113PLT1G
Ersa
onsemi-NVMFS5113PLT1G-datasheets-5269021.pdf
MOSFET P-CH 60V 10A/64A 5DFN
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    NVMFS5113PLT1G Description

    The NVMFS5113PLT1G is a high-performance MOSFET from ON Semiconductor. This device is designed for use in a variety of applications, including motor control, power conversion, and industrial control systems.

    Description:

    The NVMFS5113PLT1G is a N-channel power MOSFET with a voltage rating of 100V and a continuous drain current of 75A. It features a logic level gate drive and is available in a TO-220 package.

    Features:

    • N-channel power MOSFET
    • 100V drain-to-source voltage
    • 75A continuous drain current
    • Logic level gate drive
    • TO-220 package

    Applications:

    The NVMFS5113PLT1G is suitable for a wide range of applications, including:

    1. Motor control: The device can be used in motor control applications, such as brushless DC motor control and stepper motor control.
    2. Power conversion: The MOSFET can be used in power conversion applications, such as DC-DC converters and AC-DC power supplies.
    3. Industrial control systems: The device is suitable for use in industrial control systems, such as robotic systems and conveyor systems.
    4. Automotive applications: The NVMFS5113PLT1G can be used in automotive applications, such as electric power steering and electric braking systems.

    Overall, the NVMFS5113PLT1G is a versatile MOSFET that offers high performance and reliability in a variety of applications. Its features make it an ideal choice for designers looking for a high-quality power MOSFET for their next project.

    Tech Specifications

    Unit Weight
    V gs (V)
    Configuration
    Package Name
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    OPN in older Technology
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    Q gd Typ @ V GS = 4.5 V (nC)
    REACH Status
    Channel Type
    Wide SOA Mosfets
    Maximum Continuous Drain Current (A)
    MSL Temp (°C)
    Status
    Maximum Drain Source Voltage (V)
    Supplier Temperature Grade
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    MSL Type
    Mounting
    C rss Typ (pF)
    Qualification
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Drain Source Resistance (MOhm)
    P D Max (W)
    R DS(on) Max @ V GS = 4.5 V (mΩ)
    I D Max (A)
    C oss Typ (pF)
    Qg - Gate Charge
    Power Dissipation (Max)
    Development Kit
    Package Height
    Vgs (Max)
    Maximum Operating Temperature
    Q g Typ @ V GS = 4.5 V (nC)
    RoHS Status
    Q rr Typ (nC)
    SVHC Exceeds Threshold
    Silicon Family
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Q g Typ @ V GS = 10 V (nC)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    V gs(th) Max (V)
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Channel Polarity
    R DS(on) Max @ V GS = 10 V (mΩ)
    ECCN
    Grade
    V (BR)DSS Min (V)
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    Case Outline
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Gate Level
    Supplier Device Package
    Minimum Operating Temperature (°C)
    C iss Typ (pF)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Mfr
    Mounting Style
    R DS(on) Max @ V GS = 2.5 V (mΩ)
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Package Length
    Series
    Forward Transconductance - Min
    Pd - Power Dissipation
    Base Product Number

    NVMFS5113PLT1G Documents

    Download datasheets and manufacturer documentation for NVMFS5113PLT1G

    Ersa NxMFS5113PLT1G 28/Sep/2023      
    Ersa NVMFS5113PL      
    Ersa NVMFS5113PL      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS5113PLT1G      

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