onsemi_NVMFS5C604NLWFAFT1G

onsemi
NVMFS5C604NLWFAFT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C604NLWFAFT1G
278-NVMFS5C604NLWFAFT1G
Ersa
onsemi-NVMFS5C604NLWFAFT1G-datasheets-1702225.pdf
MOSFET N-CH 60V 287A 5DFN
In Stock : 3728

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NVMFS5C604NLWFAFT1G Description

NVMFS5C604NLWFAFT1G Description

The NVMFS5C604NLWFAFT1G from onsemi is a high-performance N-channel MOSFET designed for demanding automotive and industrial applications. With a 60V drain-to-source voltage (Vdss) and an impressive continuous drain current (Id) of 287A (Tc), this device delivers robust power handling in a compact 5DFN surface-mount package. Its ultra-low on-resistance (Rds(on)) of 1.2mOhm at 50A, 10V minimizes conduction losses, enhancing efficiency in high-current circuits. The MOSFET is AEC-Q101 qualified, ensuring reliability for automotive environments, and features a ±20V gate-to-source voltage (Vgs) tolerance for robust gate drive compatibility.

NVMFS5C604NLWFAFT1G Features

  • Low Rds(on): 1.2mOhm @ 50A, 10V reduces power dissipation and improves thermal performance.
  • High Current Capability: 287A (Tc) continuous drain current supports high-power applications.
  • Automotive Grade: Compliant with AEC-Q101 standards for harsh operating conditions.
  • Optimized Gate Charge: 52nC @ 4.5V (Qg) ensures fast switching and reduced switching losses.
  • Wide Vgs Range: ±20V gate drive tolerance enhances design flexibility.
  • Advanced Packaging: 5DFN (Tape & Reel) offers space savings and automated assembly compatibility.
  • RoHS3 & REACH Compliant: Meets environmental and regulatory requirements.

NVMFS5C604NLWFAFT1G Applications

This MOSFET is ideal for high-efficiency power conversion systems, including:

  • Automotive Systems: Electric vehicle (EV) power distribution, motor drives, and battery management.
  • Industrial Power Supplies: High-current DC-DC converters, synchronous rectification, and load switches.
  • Energy Storage: Solar inverters and UPS systems requiring low-loss switching.
  • High-Frequency Switching: Applications demanding fast switching speeds and minimal thermal resistance.

Conclusion of NVMFS5C604NLWFAFT1G

The NVMFS5C604NLWFAFT1G stands out for its exceptional current handling, ultra-low Rds(on), and automotive-grade reliability. Its optimized gate charge and thermal performance make it a superior choice for high-power designs where efficiency and durability are critical. Whether in automotive electrification or industrial power systems, this MOSFET delivers high performance, compact integration, and compliance with stringent industry standards.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Operating Junction Temperature (°C)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFS5C604NLWFAFT1G Documents

Download datasheets and manufacturer documentation for NVMFS5C604NLWFAFT1G

Ersa Wafer Fab 19/Feb/2021      
Ersa NVMFS5C604NL      
Ersa NVMFS5C604NL      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS5C604NLWFAFT1G      

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