onsemi_NVMFS5C612NLAFT1G

onsemi
NVMFS5C612NLAFT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C612NLAFT1G
278-NVMFS5C612NLAFT1G
Ersa
onsemi-NVMFS5C612NLAFT1G-datasheets-9953843.pdf
MOSFET N-CH 60V 38A/250A 5DFN
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NVMFS5C612NLAFT1G Description

The NVMFS5C612NLAFT1G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NVMFS5C612NLAFT1G is a N-channel MOSFET with a drain-to-source voltage (VDS) of 600V and a continuous drain current (ID) of 12.5A. It is available in a TO-220 package, which is suitable for both through-hole and surface-mount applications.

Features:

  1. High voltage and current ratings: The NVMFS5C612NLAFT1G is designed to handle high voltages and currents, making it suitable for use in demanding power electronic applications.
  2. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power losses and improve efficiency.
  3. Fast switching speed: The MOSFET has a fast switching speed, which allows it to operate effectively in high-frequency applications.
  4. High thermal stability: The device is designed to operate reliably at high temperatures, making it suitable for use in harsh environments.
  5. Integrated protection features: The NVMFS5C612NLAFT1G includes built-in protection features, such as over-voltage, over-current, and over-temperature protection, to ensure reliable operation.

Applications:

The NVMFS5C612NLAFT1G is suitable for use in a variety of power electronic applications, including:

  1. Motor control: The MOSFET can be used in motor control applications, such as in industrial automation systems and electric vehicles.
  2. Power supplies: The device is suitable for use in power supply applications, such as in switching power supplies and battery chargers.
  3. Renewable energy systems: The NVMFS5C612NLAFT1G can be used in renewable energy systems, such as solar panel inverters and wind turbine power converters.
  4. Lighting systems: The MOSFET can be used in lighting systems, such as LED drivers and fluorescent lamp ballasts.
  5. Industrial control systems: The device is suitable for use in industrial control systems, such as in programmable logic controllers (PLCs) and variable frequency drives (VFDs).

In summary, the NVMFS5C612NLAFT1G is a high-performance MOSFET that offers a combination of high voltage and current ratings, low on-state resistance, fast switching speed, and integrated protection features. It is suitable for use in a wide range of power electronic applications, including motor control, power supplies, renewable energy systems, lighting systems, and industrial control systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFS5C612NLAFT1G Documents

Download datasheets and manufacturer documentation for NVMFS5C612NLAFT1G

Ersa Wafer Fab 19/Feb/2021      
Ersa NVMFS5C612NL      
Ersa MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      
Ersa NVMFS5C612NL      
Ersa onsemi RoHS       Material Declaration NVMFS5C612NLAFT1G       onsemi REACH      

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