onsemi_NVMFS5C673NLAFT1G
NVMFS5C673NLAFT1G(1)
NVMFS5C673NLAFT1G(2)
NVMFS5C673NLAFT1G(3)

onsemi
NVMFS5C673NLAFT1G  
Single FETs, MOSFETs

onsemi
NVMFS5C673NLAFT1G
278-NVMFS5C673NLAFT1G
Ersa
onsemi-NVMFS5C673NLAFT1G-datasheets-395770.pdf
MOSFET N-CHANNEL 60V 50A 5DFN
In Stock : 7797

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    NVMFS5C673NLAFT1G Description

    The NVMFS5C673NLAFT1G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed to provide excellent electrical characteristics and high reliability for a wide range of applications.

    Description:

    The NVMFS5C673NLAFT1G is a N-channel MOSFET with an International Rectifier (IR) Super Junction technology. It is offered in a TO-220 package, which is suitable for a wide range of power electronic applications.

    Features:

    1. High voltage rating: The device has a drain-source voltage (VDS) of -650V, making it suitable for high voltage applications.
    2. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
    3. High switching speed: The device has a fast switching speed, which makes it suitable for high-frequency applications.
    4. Low gate charge: The device has a low gate charge, which helps to reduce switching losses and improve efficiency.
    5. High temperature operation: The device is designed to operate over a wide temperature range of -55°C to +175°C, making it suitable for harsh environments.

    Applications:

    The NVMFS5C673NLAFT1G is suitable for a wide range of power electronic applications, including:

    1. Motor control: The device can be used in motor control applications, such as industrial motor drives and automotive motor control systems.
    2. Power supply: The device can be used in power supply applications, such as switching power supplies and power factor correction circuits.
    3. Renewable energy: The device can be used in renewable energy applications, such as solar panel inverters and wind turbine converters.
    4. Automotive: The device can be used in automotive applications, such as electric vehicle (EV) charging systems and electric power steering systems.
    5. Industrial control: The device can be used in industrial control applications, such as robotics and programmable logic controllers (PLCs).

    In summary, the NVMFS5C673NLAFT1G is a high-performance MOSFET that offers excellent electrical characteristics and high reliability for a wide range of power electronic applications. Its high voltage rating, low on-state resistance, fast switching speed, low gate charge, and high temperature operation make it an ideal choice for demanding applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Operating Junction Temperature (°C)
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    NVMFS5C673NLAFT1G Documents

    Download datasheets and manufacturer documentation for NVMFS5C673NLAFT1G

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