The NVMFS5C673NLAFT1G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed to provide excellent electrical characteristics and high reliability for a wide range of applications.
Description:
The NVMFS5C673NLAFT1G is a N-channel MOSFET with an International Rectifier (IR) Super Junction technology. It is offered in a TO-220 package, which is suitable for a wide range of power electronic applications.
Features:
High voltage rating: The device has a drain-source voltage (VDS) of -650V, making it suitable for high voltage applications.
Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
High switching speed: The device has a fast switching speed, which makes it suitable for high-frequency applications.
Low gate charge: The device has a low gate charge, which helps to reduce switching losses and improve efficiency.
High temperature operation: The device is designed to operate over a wide temperature range of -55°C to +175°C, making it suitable for harsh environments.
Applications:
The NVMFS5C673NLAFT1G is suitable for a wide range of power electronic applications, including:
Motor control: The device can be used in motor control applications, such as industrial motor drives and automotive motor control systems.
Power supply: The device can be used in power supply applications, such as switching power supplies and power factor correction circuits.
Renewable energy: The device can be used in renewable energy applications, such as solar panel inverters and wind turbine converters.
Automotive: The device can be used in automotive applications, such as electric vehicle (EV) charging systems and electric power steering systems.
Industrial control: The device can be used in industrial control applications, such as robotics and programmable logic controllers (PLCs).
In summary, the NVMFS5C673NLAFT1G is a high-performance MOSFET that offers excellent electrical characteristics and high reliability for a wide range of power electronic applications. Its high voltage rating, low on-state resistance, fast switching speed, low gate charge, and high temperature operation make it an ideal choice for demanding applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Operating Junction Temperature (°C)
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
NVMFS5C673NLAFT1G Documents
Download datasheets and manufacturer documentation for NVMFS5C673NLAFT1G
General Announcement - 2D Barcoding (PDF) Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd. Product Change Notification (PDF)
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service