onsemi_NVMFS5H663NLT1G

onsemi
NVMFS5H663NLT1G  
Single FETs, MOSFETs

onsemi
NVMFS5H663NLT1G
278-NVMFS5H663NLT1G
Ersa
onsemi-NVMFS5H663NLT1G-datasheets-3979975.pdf
MOSFET N-CH 60V 16.2A/67A 5DFN
In Stock : 1613

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NVMFS5H663NLT1G Description

NVMFS5H663NLT1G Description

The NVMFS5H663NLT1G is a high-performance MOSFET (Metal Oxide) developed by onsemi, designed for automotive applications. This Single FET offers exceptional electrical characteristics and robust performance, making it suitable for a wide range of applications. With a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 16.2A at 25°C, the NVMFS5H663NLT1G delivers reliable power management in demanding environments.

NVMFS5H663NLT1G Features

  • High Input Capacitance (Ciss): The NVMFS5H663NLT1G boasts a maximum input capacitance of 1131 pF at 30V, ensuring fast switching and minimal signal distortion.
  • Low Gate Charge (Qg): With a maximum gate charge of 17 nC at 10V, this MOSFET minimizes power loss during switching, enhancing overall efficiency.
  • Robust Power Dissipation: Capable of withstanding up to 3.7W at ambient temperature and 63W at case temperature, the NVMFS5H663NLT1G is designed for high-power applications.
  • Automotive Grade: Graded for automotive use, this MOSFET is built to withstand the harsh conditions found in automotive environments.
  • Surface Mount Technology: The 5DFN package allows for easy integration into surface mount applications, reducing space requirements and improving manufacturing efficiency.
  • Low Rds On: With a maximum Rds On of 7.2mOhm at 20A and 10V, the NVMFS5H663NLT1G provides low on-resistance for efficient power delivery.

NVMFS5H663NLT1G Applications

The NVMFS5H663NLT1G is ideal for a variety of applications where high power and reliability are paramount:

  • Automotive Electronics: Due to its automotive grade and robust performance, the NVMFS5H663NLT1G is well-suited for automotive power management systems, such as electric vehicle charging and battery management.
  • Industrial Control Systems: In industrial settings, this MOSFET can be used for motor control and power conversion applications, providing efficient power management and reliable operation.
  • Power Supplies: The NVMFS5H663NLT1G's high power dissipation and low on-resistance make it an excellent choice for power supply designs, ensuring efficient energy transfer and heat management.

Conclusion of NVMFS5H663NLT1G

The NVMFS5H663NLT1G from onsemi is a powerful and reliable MOSFET designed for high-performance automotive and industrial applications. Its unique combination of high input capacitance, low gate charge, and robust power dissipation make it an ideal choice for demanding power management tasks. With its automotive grade rating and surface mount technology, the NVMFS5H663NLT1G is poised to deliver exceptional performance in a variety of high-power applications.

Tech Specifications

Unit Weight
V gs (V)
Configuration
Package Name
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
OPN in older Technology
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
Q gd Typ @ V GS = 4.5 V (nC)
REACH Status
Channel Type
Wide SOA Mosfets
Maximum Continuous Drain Current (A)
MSL Temp (°C)
Status
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
MSL Type
Mounting
C rss Typ (pF)
Qualification
Rise Time
Current - Continuous Drain (Id) @ 25°C
Vgs th - Gate-Source Threshold Voltage
Package
P D Max (W)
R DS(on) Max @ V GS = 4.5 V (mΩ)
I D Max (A)
C oss Typ (pF)
Qg - Gate Charge
Power Dissipation (Max)
Package Height
Vgs (Max)
Maximum Operating Temperature
Q g Typ @ V GS = 4.5 V (nC)
RoHS Status
Q rr Typ (nC)
SVHC Exceeds Threshold
Silicon Family
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Q g Typ @ V GS = 10 V (nC)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
V gs(th) Max (V)
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Channel Polarity
Maximum Drain Source Resistance (mOhm)
R DS(on) Max @ V GS = 10 V (mΩ)
ECCN
Grade
V (BR)DSS Min (V)
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
Case Outline
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Gate Level
Supplier Device Package
Minimum Operating Temperature (°C)
C iss Typ (pF)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Mfr
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
Series
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number

NVMFS5H663NLT1G Documents

Download datasheets and manufacturer documentation for NVMFS5H663NLT1G

Ersa NVMFS5H663NL, NVMFS5H663NLWF      
Ersa NVMFS5H663NL, NVMFS5H663NLWF      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFS5H663NLT1G      

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