onsemi
NVMFS6H858NLT1G  
Single FETs, MOSFETs

onsemi
NVMFS6H858NLT1G
278-NVMFS6H858NLT1G
Ersa
onsemi-NVMFS6H858NLT1G-datasheets-2184545.pdf
MOSFET N-CH 80V 8.7A/30A 5DFN
In Stock : 2125

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NVMFS6H858NLT1G Description

NVMFS6H858NLT1G Description

The NVMFS6H858NLT1G is a high-performance MOSFET N-CH 80V device designed and manufactured by onsemi. This Single FET offers superior technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry.

NVMFS6H858NLT1G Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
  • Vgs (Max): ±20V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Base Product Number: NVMFS6

NVMFS6H858NLT1G Applications

The NVMFS6H858NLT1G is ideal for use in various applications where high voltage and current handling capabilities are required. Some specific use cases include:

  1. Power Electronics: Due to its high drain-source voltage and continuous drain current ratings, this MOSFET is suitable for power electronics applications such as power supplies, motor drives, and battery management systems.
  2. Automotive Electronics: The NVMFS6H858NLT1G can be used in automotive electronics for applications like electric vehicle charging systems, inverter drives, and power management.
  3. Industrial Control Systems: This MOSFET is well-suited for industrial control systems that require high voltage and current handling capabilities, such as motor control and power distribution systems.

Conclusion of NVMFS6H858NLT1G

The NVMFS6H858NLT1G is a powerful and versatile MOSFET N-CH 80V device that offers exceptional performance and reliability. Its unique features, such as low Rds On, high drain-source voltage, and continuous drain current ratings, make it an ideal choice for a wide range of applications in the electronics industry. With its compliance to REACH and RoHS standards, the NVMFS6H858NLT1G is not only a high-performance device but also an environmentally responsible choice.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

NVMFS6H858NLT1G Documents

Download datasheets and manufacturer documentation for NVMFS6H858NLT1G

Ersa onsemi RoHS       onsemi REACH      

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