onsemi_SMMBFJ177LT1G
original

onsemi
SMMBFJ177LT1G

288-SMMBFJ177LT1G
PDF Datasheet
Trans JFET P-CH Automotive 3-Pin SOT-23 T/R
28 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Gate to Source Voltage (Vgs)
-25V
Input Capacitance
11pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Packaging
Tape and Reel
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SMMBFJ177LT1G Description

SMMBFJ177LT1G Description

The SMMBFJ177LT1G is a high-performance JFET P-Channel transistor designed and manufactured by onsemi. This surface-mount device is specifically engineered for automotive applications, offering superior performance and reliability in demanding environments. With a maximum power rating of 225 mW and a breakdown voltage of 30 V, the SMMBFJ177LT1G is ideal for a wide range of electronic circuits that require high voltage and power handling capabilities.

SMMBFJ177LT1G Features

  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
  • ECCN: EAR99
  • Grade: Automotive
  • Resistance - RDS(On): 300 Ohms
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Mounting Type: Surface Mount
  • Product Status: Active
  • Power - Max: 225 mW
  • REACH Status: REACH Unaffected
  • Mfr: onsemi
  • HTSUS: 8541.21.0095
  • Package: Tape & Reel (TR)
  • RoHS Status: ROHS3 Compliant
  • Base Product Number: SMMBFJ177
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

The SMMBFJ177LT1G stands out from similar models due to its automotive-grade design, which ensures reliable operation in harsh conditions. Its low input capacitance and low RDS(On) resistance contribute to high-speed switching and low power dissipation, making it an excellent choice for power-sensitive applications.

SMMBFJ177LT1G Applications

The SMMBFJ177LT1G is ideal for various applications where high voltage and power handling are required, such as:

  1. Automotive Electronics: Due to its automotive-grade design, the SMMBFJ177LT1G is well-suited for use in automotive electronics, such as engine control units, powertrain management systems, and infotainment systems.
  2. Industrial Control Systems: The high breakdown voltage and power handling capabilities make the SMMBFJ177LT1G an excellent choice for industrial control systems, where high voltage and power handling are essential.
  3. Power Management Circuits: The SMMBFJ177LT1G's low RDS(On) resistance and low input capacitance make it ideal for use in power management circuits, where high efficiency and fast switching are required.

Conclusion of SMMBFJ177LT1G

In conclusion, the SMMBFJ177LT1G is a high-performance JFET P-Channel transistor designed for automotive and industrial applications. Its automotive-grade design, high breakdown voltage, and low RDS(On) resistance make it an excellent choice for high-voltage and power-sensitive applications. With its unique features and advantages, the SMMBFJ177LT1G is the ideal solution for a wide range of electronic circuits that require superior performance and reliability.

FAQ

What voltage specification is listed for SMMBFJ177LT1G?
The listed voltage-related specification for SMMBFJ177LT1G is -25V.
What package or case is SMMBFJ177LT1G available in?
What operating temperature range does SMMBFJ177LT1G support?
What is SMMBFJ177LT1G?
Is SMMBFJ177LT1G currently in stock?
Availability (In Stock : 594 )
Quantity Unit Price Ext. Price
5+ $0.30492 $1.52
50+ $0.24444 $12.22
150+ $0.21852 $32.78
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