Vishay / Siliconix_SI2316DS-T1-E3
original

Vishay / Siliconix
SI2316DS-T1-E3

278-SI2316DS-T1-E3
PDF Datasheet
MOSFET N-CH 30V 2.9A SOT23-3
11 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
215 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Product Status
Active
Supplier Device Package
SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
700mW (Ta)
Package / Case
TO-236-3, SC-59, SOT-23-3
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SI2316DS-T1-E3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SI2316DS-T1-E3 belongs to can be classified under the Discrete Semiconductors. SI2316DS-T1-E3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SI2316DS-T1-E3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is the standard lead time for SI2316DS-T1-E3?
The standard lead time for SI2316DS-T1-E3 is 11 Weeks.
What is SI2316DS-T1-E3?
Are there related or alternative parts for SI2316DS-T1-E3?
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