onsemi

SMUN5111T1G  

Single, Pre-Biased Bipolar Transistors

SMUN5111T1G Description

The SMUN5111T1G is a single, pre-biased PNP bipolar transistor offered by onsemi. This automotive-grade device is designed for surface mount applications and is packaged in a compact SC70-3 package. With a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, the SMUN5111T1G is well-suited for a variety of low-power applications.

SMUN5111T1G Features

• Technical Specifications:

  • Maximum collector current (Ic): 100 mA
  • Maximum Vce saturation: 250 mV @ 300 µA, 10 mA
  • Maximum power dissipation: 202 mW
  • DC current gain (hFE): Minimum 35 @ 5 mA, 10 V
  • Maximum collector cutoff current: 500 nA
  • Base and emitter-base resistors: 10 kOhms each
  • Moisture sensitivity level (MSL): 1 (Unlimited)

• Performance Benefits:

  • Automotive-grade reliability
  • Surface mount packaging for space-saving designs
  • Pre-biased design for ease of use in low-power applications
  • RoHS3 compliant and REACH unaffected, ensuring environmental compliance

• Unique Features and Advantages:

  • The SMUN5111T1G's pre-biased design simplifies circuit design and reduces the need for external biasing components, making it an ideal choice for space-constrained applications.
  • Its automotive-grade rating ensures reliable operation in demanding environments, making it suitable for use in automotive and industrial control systems.

SMUN5111T1G Applications

The SMUN5111T1G is ideal for a variety of applications where a low-power, pre-biased PNP transistor is required. Some specific use cases include:

• Automotive Applications:

  • Engine control modules
  • Power window and seat control systems
  • Instrumentation and lighting control

• Industrial Control Systems:

  • Motor control and drive circuits
  • Sensor interfaces and signal conditioning
  • Power management and distribution systems

• Consumer Electronics:

  • Audio and video amplifiers
  • Battery management systems
  • Portable device power management

Conclusion of SMUN5111T1G

The SMUN5111T1G is a versatile, pre-biased PNP bipolar transistor that offers a combination of performance, reliability, and ease of use. Its automotive-grade rating, compact packaging, and pre-biased design make it an excellent choice for a wide range of low-power applications in automotive, industrial, and consumer electronics markets. With its unique features and advantages, the SMUN5111T1G stands out as a reliable and cost-effective solution for demanding applications.

SMUN5111T1G Documents

Download datasheets and manufacturer documentation for SMUN5111T1G

PCN Assembly/Origin :

Bond Wire 07/Mar/2020      

Datasheets :

MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3      

HTML Datasheet :

MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3      

PCN Design/Specification :

Green Compound Update 04/Mar/2015      

Environmental Information :

onsemi RoHS       Material Declaration SMUN5111T1G       onsemi REACH