ROHM Semiconductor_EMH4T2R
original

ROHM Semiconductor
EMH4T2R

293-EMH4T2R
PDF Datasheet
TRANS 2NPN PREBIAS 0.15W EMT6
20 Weeks

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Tech Specifications

Frequency - Transition
250MHz
Current - Collector (Ic) (Max)
100mA
Resistor - Base (R1)
10kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
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EMH4T2R Description

EMH4T2R Description

The EMH4T2R is a Bipolar Transistor Array from ROHM Semiconductor, designed for pre-biased applications. This 2NPN prebias transistor is housed in an EMT6 package, making it suitable for surface mount applications. With a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 150mW, the EMH4T2R is designed for reliable performance in various electronic circuits.

EMH4T2R Features

  • Technical Specifications:

    • Frequency - Transition: 250MHz
    • Current - Collector (Ic) (Max): 100mA
    • Resistor - Base (R1): 10kOhms
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • Power - Max: 150mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Performance Benefits:

    • High frequency transition of 250MHz for fast switching applications
    • Low Vce saturation of 300mV for efficient power management
    • High DC current gain (hFE) of 100 for improved signal amplification
  • Unique Advantages:

    • Surface mount packaging for compact design and easy integration
    • Active product status for ongoing support and availability
    • REACH unaffected and RoHS3 compliant for environmental and regulatory compliance

EMH4T2R Applications

The EMH4T2R is ideal for a variety of applications where pre-biased transistor arrays are required. Some specific use cases include:

  1. Amplifier Circuits: The high DC current gain and low Vce saturation make it suitable for audio and signal amplification applications.
  2. Switching Applications: The 250MHz frequency transition allows for fast switching in digital circuits.
  3. Power Management: The 150mW power dissipation rating makes it suitable for low-power applications where efficient power management is critical.

Conclusion of EMH4T2R

The EMH4T2R from ROHM Semiconductor is a versatile Bipolar Transistor Array designed for pre-biased applications. Its unique combination of technical specifications, performance benefits, and unique advantages make it an ideal choice for a wide range of electronic circuits. With its ongoing support, environmental compliance, and reliable performance, the EMH4T2R is a valuable component for any engineer's toolkit.

FAQ

Are there related or alternative parts for EMH4T2R?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the mounting type of EMH4T2R?
What is EMH4T2R?
What package or case is EMH4T2R available in?
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Availability (In Stock : 17400 )
Quantity Unit Price Ext. Price
50+ $0.05996 $3.00
150+ $0.05153 $7.73
500+ $0.04520 $22.60
2500+ $0.04015 $100.38
5000+ $0.03761 $188.05
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