ROHM Semiconductor_RJU002N06T106
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ROHM Semiconductor
RJU002N06T106

278-RJU002N06T106
PDF Datasheet
MOSFET N-CH 60V 200MA UMT3
16 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 10 V
Product Status
Not For New Designs
Supplier Device Package
UMT3
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
200mW (Ta)
Package / Case
SC-70, SOT-323
Technology
MOSFET (Metal Oxide)
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RJU002N06T106 Description

RJU002N06T106 Description

The RJU002N06T106 is a high-performance MOSFET (Metal Oxide) from ROHM Semiconductor, designed for single FET applications. This N-channel device offers a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 200mA at 25°C. With a low on-resistance (Rds On) of 2.3 Ohms at 200mA and 4.5V Vgs, the RJU002N06T106 provides efficient power management in various electronic systems.

RJU002N06T106 Features

  • Technology: Advanced MOSFET technology for reliable performance
  • Input Capacitance (Ciss): 18 pF @ 10V, minimizing input capacitance for faster switching
  • Vgs (Max): ±12V, supporting a wide range of gate voltages
  • Operating Temperature: 150°C (TJ), suitable for high-temperature applications
  • Power Dissipation (Max): 200mW (Ta), ensuring efficient power management
  • Mounting Type: Surface Mount
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring long-term reliability in various environments
  • REACH Status: REACH Unaffected, complying with European chemical regulations
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards

RJU002N06T106 Applications

The RJU002N06T106 is ideal for applications requiring high efficiency and reliability in power management. Some specific use cases include:

  1. Power Supplies: Efficiently managing power in switching power supplies and voltage regulators
  2. Automotive Electronics: Withstanding high temperatures and providing reliable performance in automotive control systems
  3. Industrial Control: Supporting high-voltage and high-current applications in industrial automation and control systems
  4. Telecommunications: Ensuring reliable signal transmission in high-voltage telecommunication equipment

Conclusion of RJU002N06T106

The RJU002N06T106 from ROHM Semiconductor is a high-performance MOSFET designed for single FET applications. Its advanced technology, low on-resistance, and wide operating temperature range make it an ideal choice for power management in various electronic systems. With its unique features and advantages, the RJU002N06T106 offers reliable performance and efficient power management in demanding applications.

FAQ

What is the standard lead time for RJU002N06T106?
The standard lead time for RJU002N06T106 is 16 Weeks.
What is the mounting type of RJU002N06T106?
Does RJU002N06T106 have quantity-based pricing?
What operating temperature range does RJU002N06T106 support?
What voltage specification is listed for RJU002N06T106?
Availability (In Stock : 3028 )
Quantity Unit Price Ext. Price
5+ $0.08255 $0.41
50+ $0.06605 $3.30
150+ $0.05780 $8.67
500+ $0.05161 $25.81
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