ROHM Semiconductor_RSD150N06TL
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ROHM Semiconductor
RSD150N06TL

278-RSD150N06TL
PDF Datasheet
MOSFET N-CH 60V 15A CPT3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Product Status
Active
Supplier Device Package
CPT3
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
20W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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RSD150N06TL Description

RSD150N06TL Description

The RSD150N06TL is a high-performance MOSFET N-CH 60V 15A CPT3 semiconductor device manufactured by ROHM Semiconductor. This single FET is designed for high-power applications and offers excellent electrical characteristics, making it suitable for various electronic devices. With a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15A at 25°C, the RSD150N06TL delivers outstanding performance in demanding applications.

RSD150N06TL Features

  • Technology: MOSFET (Metal Oxide) - Offers high efficiency and fast switching capabilities.
  • Input Capacitance (Ciss): 930 pF @ 10V - Minimizes input capacitance, reducing power consumption.
  • Gate Charge (Qg): 18 nC @ 10V - Minimizes gate charge, improving switching speed and efficiency.
  • Drain to Source Voltage (Vdss): 60V - Suitable for high-voltage applications.
  • Power Dissipation (Max): 20W (Tc) - Capable of handling high power dissipation.
  • Operating Temperature: 150°C (TJ) - Ideal for high-temperature environments.
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V - Offers low on-resistance for efficient power delivery.
  • Vgs(th) (Max) @ Id: 3V @ 1mA - Ensures reliable gate threshold voltage.
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V - Provides flexibility in gate drive voltage requirements.

RSD150N06TL Applications

The RSD150N06TL is ideal for various applications where high power, efficiency, and reliability are critical. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the RSD150N06TL is suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  2. Industrial Control Systems: The device's high temperature rating and robust performance make it ideal for use in industrial control systems, such as motor drives and inverters.
  3. Automotive Applications: The RSD150N06TL can be used in automotive systems, such as electric vehicle chargers, battery management systems, and power electronics.
  4. Telecommunications: The device's high efficiency and fast switching capabilities make it suitable for telecommunications equipment, such as power amplifiers and signal conditioning circuits.

Conclusion of RSD150N06TL

The RSD150N06TL from ROHM Semiconductor is a powerful and reliable MOSFET N-CH 60V 15A CPT3 device designed for high-performance applications. Its unique features, such as low input capacitance, low gate charge, and high operating temperature, provide significant advantages over similar models. With its wide range of applications, the RSD150N06TL is an excellent choice for engineers looking to improve the performance and reliability of their electronic designs.

FAQ

What voltage specification is listed for RSD150N06TL?
The listed voltage-related specification for RSD150N06TL is 60 V.
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