SAMSUNG_K4B1G1646G-BCNB
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SAMSUNG
K4B1G1646G-BCNB

774-K4B1G1646G-BCNB
DDR DRAM, 64MX16, 0.18ns, CMOS, PBGA96

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Tech Specifications

Number of Terminals
96
Terminal Position
BOTTOM
JEDEC Package Code
R-PBGA-B96
Supply Voltage-Nom (Vsup)
1.5
Number of Words
67108864
Number of Words Code
64000000
Memory IC Type
DDR DRAM
Access Time-Max
0.18
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K4B1G1646G-BCNB Description

DDR DRAM, 64MX16, 0.18ns, CMOS, PBGA96

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