SAMSUNG_K4B2G1646F-BCNB
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SAMSUNG
K4B2G1646F-BCNB

774-K4B2G1646F-BCNB
PDF Datasheet
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA

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APAC
ISO9001
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ISO45001
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Tech Specifications

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8542.32.00.36
Automotive
No
PPAP
No
DRAM Type
DDR3 SDRAM
Chip Density (bit)
2G
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K4B2G1646F-BCNB Description

1. Product Overview

K4B2G1646F-BCNB is a 2‑gigabit (2Gb) Double Data Rate 3 (DDR3) Synchronous DRAM manufactured by Samsung Semiconductor, belonging to the DDR3 F‑die generation. The device is organized as 128M words × 16 bits (128M × 16), delivering a total storage capacity of 256 megabytes.

 

Item    Description
Memory Type    DDR3 SDRAM (Double Data Rate 3)
Density    2 Gbit (256 Mbyte)
Organization    128M × 16 (128 million words × 16 bits)
Die Generation    F‑die
Package    96‑ball FBGA (Fine‑Pitch Ball Grid Array)
RoHS    Lead‑Free and Halogen‑Free, RoHS compliant

The part number K4B2G1646F-BCNB can be decoded as:

K — Samsung memory

4 — DRAM

B — DDR3

2G — 2 Gb density

16 — x16 data bus width

46 — Refresh (8K / 64ms)

F — F‑die, 90nm process class

B — Version / speed bin: DDR3‑2133 (CL=11)

C — Package: FBGA type

N — Power / standard

B — Temperature: commercial grade, 0 °C to 95 °C

2. Key Technical Specifications

The tables below summarise the core specifications of K4B2G1646F-BCNB based on the official Samsung datasheet and multiple distributor references.

Performance & Core Parameters

 

Specification    Value
Data Transfer Rate    2133 Mbps (PC3‑17000)
Clock Frequency (fc)    1066 MHz (1.066 GHz)
CAS Latency (CL)    9 ( =DDR3‑1600? )
Burst Length (BL)    8
Number of Banks    8 internal memory banks
Words per Bank    16M (per x16 configuration)
Data Bus Width    16 bits (bidirectional)
Address Bus Width    17 bits (A0–A16)
Interface    SSTL_1.5 (Stub Series Terminated Logic for 1.5V)
Operating Voltage (VDD / VDDQ)    1.5 V nominal (1.425 V to 1.575 V)
Operating Current (IDD)    145 mA (max)
Access Time (tAC)    0.18 ns (max)

Temperature & Environmental

 

Parameter    Value
Operating Temperature (Case)    0 °C to +95 °C
Commercial / Industrial    Commercial grade
RoHS    Lead‑Free, Halogen‑Free
Automotive    No

Timing & Performance Details

 

Feature    Value
Clock Cycle Time (tCK)    0.938 ns @ DDR3‑2133
Refresh    8K / 64ms (auto and self‑refresh supported)
Burst Types    Sequential / Interleaved
Additional Features    ODT (On‑Die Termination), ZQ Calibration, CWL (CAS Write Latency)

Package & Physical

 

Parameter    Value
Package Type    96‑ball FBGA (Fine‑Pitch Ball Grid Array)
Form Factor    96‑ball array (x16 configuration)
Dimensions    7.5 mm × 13.0 mm typical
Ball Pitch    0.8 mm
PCB / Footprint    96‑ball pad with 0.8 mm spacing
Lead Shape    Ball (all positions)
Mounting Type    Surface mount (SMD)
Mass    Approx. 2.03 g
Packaging Style    Tray (standard)
3. Package & Interface Details

The K4B2G1646F-BCNB is housed in a 96‑ball FBGA (Fine‑Pitch Ball Grid Array) package, optimised for high‑density, surface‑mount applications.

Signal groups include:

CK_t / CK_c — differential clock inputs

CKE — clock enable

CS_n — chip select

RAS_n / CAS_n / WE_n — command inputs

BA0–BA2 — bank address inputs (8 banks)

A0–A16 — address inputs (17 bits)

DQ[15:0] — 16‑bit bidirectional data bus

DQS_t / DQS_c — differential data strobe signals

DM — data mask

ODT — on‑die termination control

ZQ — external reference for ZQ calibration

RESET_n — active low reset (optional)

VDD / VDDQ / VSS — power and ground rails

VREF — reference voltage

Key interface features include:

SSTL_1.5 I/O standard

Programmable On‑Die Termination (ODT) for signal integrity

ZQ calibration to compensate for process, voltage, and temperature variations

DLL (Delay‑Locked Loop) for clock alignment and data capture

Write Leveling for optimal timing alignment between controller and DRAM

Multi‑Purpose Register (MPR) for test and calibration

Temperature‑controlled Self‑Refresh (TCSR) for power‑optimised low‑power operation

4. Applications

According to distributor and application literature, the K4B2G1646F-BCNB is suited for the following application domains:

Telecommunications & networking — Routers, switches, base stations

Industrial control systems — PLCs, HMIs, automation controllers

Consumer electronics — Set‑top boxes, digital TVs, DVRs

Gaming devices — Consoles, arcade systems, handheld‑gaming electronics

Printing & imaging — Printers, scanners, copiers, multifunction peripherals

Medical devices — Patient monitors, imaging systems, portable diagnostic equipment

Automotive infotainment & cluster — Head units, instrument clusters, navigation systems

Thin clients / POS terminals — Retail, banking, vending machines, mobile payment terminals

PON / xDSL — Passive Optical Networks, digital subscriber line equipment

Embedded computing — Single‑board computers, P‑series embedded modules, industrial motherboards

Storage controllers — RAID cards, SSDs, NAS devices, hybrid storage arrays

Security systems — NVRs / DVRs, video encoders, access‑control appliances

Test & measurement — Oscilloscopes, logic analysers, data acquisition equipment

Military / ruggedised subsystems — Avionics, ground‑based radar, rugged servers (conduction‑cooled variants may be available)

5. Product Status & Lifecycle

The lifecycle status of K4B2G1646F-BCNB is inconsistent across distributor and manufacturer channels, with conflicting information:

 

Source    Status    Evidence
AVAQ (via Samsung)    Obsolete    Explicitly listed as Obsolete on the manufacturer‑sourced page
LCSC (Licheng Biz)    Active (Mass Production)    Listed as "mass production"
DigiKey / Mouser / Arrow    Not found    No standard distribution stock
Xinpian IC    Mass Production    Stated as "批量生产"
Oneyac    Obsolete (BCNBT variant)    The closely related K4B2G1646F-BCNBT is explicitly declared as discontinued

Important advice: The K4B2G1646F-BCNB represents an older DDR3 component that is no longer recommended for new product designs. For existing legacy systems in maintenance or repair, the chip remains available through aftermarket channels; however, for new designs, selecting a currently active DDR3 or DDR4 device from Samsung, Micron, SK Hynix, or a recommended alternative is strongly advised.

Potential replacement / alternative parts include:

Samsung K4B2G0846F‑Bxxx — same density, 8-bit interface variant (may serve as a drop‑in with different configuration)

Samsung K4B2G1646F‑BMMA — different speed / package version

Micron MT41K256M16HA‑xxx — similar 2Gb x16 DDR3 device

SK Hynix H5TQ2G63DFR‑xxx — 2Gb DDR3 x16 replacement

6. Material Compliance

The K4B2G1646F-BCNB complies with leading industry environmental standards:

 

Aspect    Compliance
RoHS    Yes (Lead‑Free and Halogen‑Free)
REACH    SVHC‑free compliant (to be confirmed for new designs)
Conflict Minerals    DRC conflict‑free compliant (based on Samsung policy)
ECCN    EAR99 (less‑restricted classification)

Key note on product availability: K4B2G1646F-BCNB is not universally available from mainstream distribution and carries an "Obsolete" status from Samsung semiconductor sources. The design, development, and procurement communities should treat the part as aged inventory only, and not rely on it for volume production or new product development.

FAQ

What is the K4B2G1646F-BCNB?
A: The K4B2G1646F-BCNB is a 2-gigabit (2Gb) high-performance DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) chip manufactured by Samsung Semiconductor. It is internally organized as 128 million words (128M) of 16 bits each (128M x 16), making it ideal for a wide range of consumer electronics and computing applications. The device is housed in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package and is built with a lead-free & halogen-free design, making it RoHS compliant.
What are the key features and technical specifications of the K4B2G1646F-BCNB?
How does the K4B2G1646F-BCNB interface with a host controller, and what is its memory architecture?
What are the reliability and performance specifications of the K4B2G1646F-BCNB?
What applications is the K4B2G1646F-BCNB intended for, and what is its product life‑cycle status?
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