STMicroelectronics

MJD112T4  

Single Bipolar Transistors

MJD112T4 Description

The MJD112T4 is a high-performance NPN bipolar transistor designed and manufactured by STMicroelectronics. This device is part of the Single Bipolar Transistors category and offers a range of advanced technical specifications that make it suitable for various applications. With an operating temperature of 150°C (TJ), the MJD112T4 can withstand high-temperature environments, ensuring reliable performance in demanding conditions.

MJD112T4 Features

• Operating Temperature: The MJD112T4 can operate at temperatures up to 150°C (TJ), making it ideal for high-temperature applications.
• Frequency - Transition: With a transition frequency of 25MHz, the MJD112T4 offers excellent high-frequency performance.
• Current - Collector (Ic) (Max): The MJD112T4 can handle a maximum collector current of 2A, making it suitable for high-current applications.
• Vce Saturation (Max) @ Ib, Ic: The device has a low saturation voltage of 3V @ 40mA, 4A, which helps reduce power consumption in low-voltage applications.
• DC Current Gain (hFE) (Min) @ Ic, Vce: The MJD112T4 boasts a minimum current gain of 1000 @ 2A, 3V, ensuring consistent performance across a wide range of operating conditions.
• Voltage - Collector Emitter Breakdown (Max): The device can withstand a maximum collector-emitter breakdown voltage of 100V, making it suitable for high-voltage applications.
• Power - Max: The MJD112T4 can handle a maximum power dissipation of 20W, allowing it to be used in high-power applications.
• Mounting Type: The device is available in a surface-mount package, making it easy to integrate into various electronic designs.
• RoHS Status: The MJD112T4 is compliant with RoHS3 regulations, ensuring environmental compliance and suitability for use in environmentally friendly applications.

MJD112T4 Applications

The MJD112T4's unique combination of high temperature, high current, and high-frequency capabilities make it an ideal choice for a wide range of applications, including:

• Power Amplifiers: The MJD112T4's high current and power handling capabilities make it suitable for use in power amplifiers, where high power and reliability are critical.
• Switching Applications: The device's low saturation voltage and high current gain make it an excellent choice for switching applications, where low power consumption and high efficiency are desired.
• Automotive Electronics: The MJD112T4's ability to operate at high temperatures and handle high currents make it well-suited for use in automotive electronics, where reliability and performance in harsh conditions are essential.
• Industrial Control Systems: The MJD112T4's high-temperature and high-current capabilities make it ideal for use in industrial control systems, where high power and reliability are critical.

Conclusion of MJD112T4

The MJD112T4 is a versatile and high-performance NPN bipolar transistor that offers a unique combination of high temperature, high current, and high-frequency capabilities. Its advanced technical specifications and compliance with environmental regulations make it an ideal choice for a wide range of applications, including power amplifiers, switching applications, automotive electronics, and industrial control systems. With its unique features and advantages over similar models, the MJD112T4 is a reliable and efficient solution for demanding electronic designs.

MJD112T4 Documents

Download datasheets and manufacturer documentation for MJD112T4

PCN Assembly/Origin :

Mult Devices 27/Feb/2019      

Datasheets :

MJD11x      

Other Related Documents :

MJD112 View All Specifications      

HTML Datasheet :

MJD11x