STMicroelectronics_STFI26NM60N
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STMicroelectronics
STFI26NM60N

278-STFI26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in an I2PAKFP package

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Tech Specifications

Package/Case
TO-262-3
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
165mR
Drain to Source Voltage (Vdss)
600V
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.8nF
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STFI26NM60N Description

N-Channel 600 V 20A (Tc) 35W (Tc) Through Hole TO-281 (I2PAKFP)

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