STMicroelectronics

STGB10H60DF

STGB10H60DF Description

The STGB10H60DF is a high-performance, single IGBT from STMicroelectronics, designed for demanding power electronics applications. With a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 20A, this device offers robust performance in a variety of applications. Key features include a low reverse recovery time of 107ns, low switching energy of 83µJ (on) and 140µJ (off), and a maximum Vce(on) of 1.95V at 15V, 10A. The STGB10H60DF is also REACH unaffected and RoHS3 compliant, ensuring environmental compliance.

STGB10H60DF Features

• 600V, 20A, 115W IGBT in a D2PAK package
• Trench Field Stop IGBT technology for improved performance
• Low reverse recovery time of 107ns for fast switching
• Low switching energy of 83µJ (on) and 140µJ (off) for high efficiency
• Maximum Vce(on) of 1.95V at 15V, 10A for low conduction losses
• Gate charge of 57 nC for fast gate control
• REACH unaffected and RoHS3 compliant for environmental compliance
• Moisture Sensitivity Level (MSL) of 1 for unlimited storage time
• Surface mount package for easy integration into printed circuit boards

STGB10H60DF Applications

The STGB10H60DF is ideal for a wide range of power electronics applications, including:

1. Industrial motor drives and
2. Solar inverters and renewable energy systems
3. Power supplies and uninterruptible power supplies (UPS)
4. Electric vehicle (EV) charging stations and onboard chargers
5. High-power lighting and LED drivers

Conclusion of STGB10H60DF

The STGB10H60DF from STMicroelectronics is a high-performance, single IGBT that offers excellent switching performance, low conduction losses, and environmental compliance. Its unique features, such as low reverse recovery time and switching energy, make it an ideal choice for demanding power electronics applications. With its robust performance and wide range of applications, the STGB10H60DF is a valuable addition to any power electronics design.