STMicroelectronics

STGB15M65DF2

STGB15M65DF2 Description

The STGB15M65DF2 is a high-performance Trench Gate Field-Stop IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. This single IGBT offers a unique combination of technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry.

STGB15M65DF2 Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 142 ns
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Td (on/off) @ 25°C: 24ns/93ns
  • Current - Collector (Ic) (Max): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Gate Charge: 45 nC
  • Power - Max: 136 W
  • Switching Energy: 90µJ (on), 450µJ (off)
  • Current - Collector Pulsed (Icm): 60 A

• Performance Benefits:

  • Low switching energy, reducing power losses and improving efficiency
  • Fast switching times, enabling high-frequency applications
  • High breakdown voltage, suitable for demanding power electronics applications

• Unique Features and Advantages:

  • Trench Field Stop technology for improved ruggedness and performance
  • Surface Mount packaging for easy integration into compact designs
  • REACH Unaffected and ROHS3 Compliant, ensuring environmental and regulatory compliance

STGB15M65DF2 Applications

The STGB15M65DF2 is ideal for a wide range of applications, including:

1. Power Electronics: Due to its high breakdown voltage and low on-state voltage, the STGB15M65DF2 is perfect for power conversion and control in various power electronics systems.
2. Industrial Automation: Its fast switching capabilities make it suitable for motor control and drives in industrial automation applications.
3. Renewable Energy: The STGB15M65DF2 can be used in solar inverters and wind power systems, where high efficiency and reliability are crucial.
4. Electric Vehicles: This IGBT is well-suited for electric vehicle charging systems and powertrain control, thanks to its ability to handle high currents and voltages.

Conclusion of STGB15M65DF2

The STGB15M65DF2 from STMicroelectronics is a powerful and versatile Trench Gate Field-Stop IGBT that offers exceptional performance and reliability. Its unique features, such as low switching energy and high breakdown voltage, make it an ideal choice for a wide range of applications in the electronics industry, including power electronics, industrial automation, renewable energy, and electric vehicles. With its REACH Unaffected and ROHS3 Compliant status, the STGB15M65DF2 ensures environmental and regulatory compliance, making it a responsible choice for your next project.