The STGF14NC60KD, manufactured by STMicroelectronics, is a high-performance single insulated gate bipolar transistor (IGBT) designed for power electronics applications. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 11A, this device offers robust performance in demanding environments. The STGF14NC60KD is part of the PowerMESH™ series, known for its advanced power management capabilities.
Technical Specifications: The STGF14NC60KD boasts a reverse recovery time of 37ns, ensuring fast switching capabilities. It operates within a temperature range of -55°C to 175°C, making it suitable for a wide range of applications. The device's low gate charge of 34.4 nC contributes to its high efficiency, while the switching energy of 82µJ (on) and 155µJ (off) minimizes power loss during operation.
Performance Benefits: The STGF14NC60KD's low Vce(on) of 2.5V @ 15V, 7A helps reduce conduction losses, enhancing overall efficiency. Its high maximum power rating of 28W allows it to handle demanding power requirements.
Compliance and Packaging: This IGBT is REACH unaffected and RoHS3 compliant, ensuring environmental and health safety. It is available in a through-hole mounted TO220FP package, facilitating easy integration into various designs.
The STGF14NC60KD is ideal for applications requiring high power and fast switching, such as:
The STGF14NC60KD from STMicroelectronics stands out for its combination of high power handling, fast switching, and low power loss. Its compliance with environmental standards and wide operating temperature range make it a versatile choice for various power electronics applications. With its advanced features and robust performance, the STGF14NC60KD is a reliable component for demanding power management tasks.
Download datasheets and manufacturer documentation for STGF14NC60KD