The STGF15M65DF2 is a high-performance Trench Gate Field-Stop IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. This single IGBT is designed for applications requiring high efficiency, fast switching, and robust performance. With a maximum collector-emitter breakdown voltage of 650V and a continuous collector current of 30A, the STGF15M65DF2 is well-suited for a variety of power electronics applications.
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The STGF15M65DF2 is ideal for a variety of power electronics applications, including:
The STGF15M65DF2 is a versatile and high-performance IGBT designed for demanding power electronics applications. Its unique features, such as fast switching times, low switching energy, and robust design, make it an ideal choice for applications requiring high efficiency and reliability. With its compliance to environmental regulations and flexibility in PCB design, the STGF15M65DF2 is a valuable component for engineers designing next-generation power electronics systems.
Download datasheets and manufacturer documentation for STGF15M65DF2