STMicroelectronics_STGWA100H65DFB2
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STMicroelectronics
STGWA100H65DFB2

279-STGWA100H65DFB2
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Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package
18 Weeks

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STGWA100H65DFB2 Description

STMicroelectronics' STGWA100H65DFB2 is a high-performance, high-power, and high-efficiency gallium nitride (GaN) transistor. It is designed for use in a wide range of applications, including power electronics, renewable energy, and industrial control systems.

Description:

The STGWA100H65DFB2 is a normally-off enhancement-mode gallium nitride transistor. It features a high breakdown voltage of 650V and a low on-resistance of 100mΩ, making it suitable for high-power applications. The device is available in a 6x8mm PowerFLAT5™ package, which provides excellent thermal performance and ease of use.

Features:

  1. High breakdown voltage: The STGWA100H65DFB2 has a high breakdown voltage of 650V, making it suitable for use in high-voltage applications.
  2. Low on-resistance: The device has a low on-resistance of 100mΩ, which helps to minimize power losses and improve overall efficiency.
  3. Normally-off operation: The transistor features a normally-off operation, which provides increased safety and reliability in applications where unintentional conduction can be a concern.
  4. High switching speed: The STGWA100H65DFB2 offers high switching speeds, which can help to reduce switching losses and improve overall system efficiency.
  5. High thermal performance: The PowerFLAT5™ package provides excellent thermal performance, allowing for efficient heat dissipation and reliable operation in high-power applications.

Applications:

  1. Power electronics: The STGWA100H65DFB2 is well-suited for use in power electronics applications, such as power supplies, motor drives, and power converters.
  2. Renewable energy: The device can be used in renewable energy applications, such as solar inverters and wind turbine converters, where high efficiency and reliability are critical.
  3. Industrial control systems: The STGWA100H65DFB2 can be used in industrial control systems, such as motor control and variable frequency drives, to improve efficiency and performance.
  4. Electric vehicles (EVs): The transistor can be used in various power electronic systems within electric vehicles, such as onboard chargers, DC-DC converters, and traction inverters.
  5. Battery charging systems: The STGWA100H65DFB2 can be used in high-power battery charging systems, where efficiency and fast charging are essential.
    In summary, the STGWA100H65DFB2 from STMicroelectronics is a high-performance gallium nitride transistor designed for high-power applications. Its features, such as high breakdown voltage, low on-resistance, and high switching speed, make it suitable for a wide range of applications, including power electronics, renewable energy, and industrial control systems.

FAQ

What is STGWA100H65DFB2?
STGWA100H65DFB2 is a Single IGBTs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 151 )
Quantity Unit Price Ext. Price
1+ $6.63943 $6.64
10+ $5.65028 $56.50
30+ $5.04685 $151.41
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