STMicroelectronics_STGF19NC60KD
original

STMicroelectronics
STGF19NC60KD

279-STGF19NC60KD
PDF Datasheet
20 A, 600 V short circuit rugged IGBT
12 Weeks

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Tech Specifications

Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.75V
Input Type
STANDARD
Max Collector Current
16A
Max Operating Temperature
150°C
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STGF19NC60KD Description

The STGF19NC60KD is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power electronics and motor control.

Description:

The STGF19NC60KD is a high voltage N-channel MOSFET transistor that features a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 19A. It has a low on-state resistance (RDS(on)) of 60mΩ, which allows for efficient power dissipation and reduced power loss. The device also has a fast switching speed, which makes it suitable for use in high-frequency applications.

Features:

  • High voltage N-channel MOSFET transistor
  • Drain-source voltage (VDS) of 600V
  • Continuous drain current (ID) of 19A
  • Low on-state resistance (RDS(on)) of 60mΩ
  • Fast switching speed

Applications:

The STGF19NC60KD is suitable for a wide range of applications, including:

  • Power electronics
  • Motor control
  • Inverters
  • Switch mode power supplies (SMPS)
  • Battery management systems
  • Industrial control systems
  • Renewable energy systems

In summary, the STGF19NC60KD is a high voltage N-channel MOSFET transistor that offers high performance and efficiency in a variety of applications. Its low on-state resistance and fast switching speed make it an ideal choice for power electronics and motor control applications.

FAQ

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