STMicroelectronics

STGF19NC60KD  

Single IGBTs

The STGF19NC60KD is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power electronics and motor control.

Description:

The STGF19NC60KD is a high voltage N-channel MOSFET transistor that features a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 19A. It has a low on-state resistance (RDS(on)) of 60mΩ, which allows for efficient power dissipation and reduced power loss. The device also has a fast switching speed, which makes it suitable for use in high-frequency applications.

Features:

• High voltage N-channel MOSFET transistor
• Drain-source voltage (VDS) of 600V
• Continuous drain current (ID) of 19A
• Low on-state resistance (RDS(on)) of 60mΩ
• Fast switching speed

Applications:

The STGF19NC60KD is suitable for a wide range of applications, including:

• Power electronics
• Motor control
• Inverters
• Switch mode power supplies (SMPS)
• Battery management systems
• Industrial control systems
• Renewable energy systems

In summary, the STGF19NC60KD is a high voltage N-channel MOSFET transistor that offers high performance and efficiency in a variety of applications. Its low on-state resistance and fast switching speed make it an ideal choice for power electronics and motor control applications.

STGF19NC60KD Documents

Download datasheets and manufacturer documentation for STGF19NC60KD

Datasheets :

STGx19NC60KD      

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