STMicroelectronics_STGW25H120DF2

STMicroelectronics
STGW25H120DF2  
Single IGBTs

STMicroelectronics
STGW25H120DF2
279-STGW25H120DF2
Ersa
STMicroelectronics-STGW25H120DF2-datasheets-12215348.pdf
IGBT H-SERIES 1200V 25A TO-247
In Stock : 417

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STGW25H120DF2 Description

STGW25H120DF2 Description

The STGW25H120DF2 from STMicroelectronics is a high-performance 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) housed in a TO-247 package. Designed for robust power switching applications, it features Trench Field Stop technology, ensuring low conduction and switching losses. With a collector-emitter breakdown voltage (VCES) of 1200V and a maximum collector current (IC) of 50A, this IGBT is engineered for high-efficiency power conversion. Its low VCE(on) of 2.6V @ 15V, 25A minimizes power dissipation, while the gate charge (Qg) of 100nC ensures fast switching performance.

STGW25H120DF2 Features

  • Trench Field Stop Technology: Enhances efficiency with reduced conduction losses.
  • High Voltage & Current Ratings: 1200V VCES and 50A IC (100A pulsed) for demanding applications.
  • Low Switching Losses: 29ns/130ns turn-on/off delay at 25°C and 600µJ/700µJ switching energy.
  • Low Saturation Voltage: 2.6V @ 15V, 25A improves thermal performance.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
  • High Power Handling: 375W maximum power dissipation for rugged operation.

STGW25H120DF2 Applications

This IGBT is ideal for high-power switching applications, including:

  • Motor Drives: Efficient control in industrial and automotive systems.
  • Uninterruptible Power Supplies (UPS): Reliable high-voltage switching.
  • Solar Inverters: Optimized for renewable energy systems.
  • Welding Equipment: High-current handling with minimal losses.
  • Induction Heating: Fast switching for precision thermal management.

Conclusion of STGW25H120DF2

The STGW25H120DF2 stands out as a high-efficiency, rugged IGBT with superior Trench Field Stop technology, making it ideal for high-voltage, high-current applications. Its low conduction losses, fast switching, and thermal performance ensure reliability in industrial, automotive, and renewable energy systems. With RoHS3 compliance and TO-247 packaging, it offers a robust solution for engineers seeking high-performance power switching components.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Package / Case
Technology
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Package Length
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Gate-Emitter Leakage Current
RoHS
Minimum Operating Temperature
Continuous Collector Current Ic Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Maximum Gate Emitter Voltage

STGW25H120DF2 Documents

Download datasheets and manufacturer documentation for STGW25H120DF2

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa STGW25H120DF2      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STGW25H120DF2      

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