The STGW25H120DF2 from STMicroelectronics is a high-performance 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) housed in a TO-247 package. Designed for robust power switching applications, it features Trench Field Stop technology, ensuring low conduction and switching losses. With a collector-emitter breakdown voltage (VCES) of 1200V and a maximum collector current (IC) of 50A, this IGBT is engineered for high-efficiency power conversion. Its low VCE(on) of 2.6V @ 15V, 25A minimizes power dissipation, while the gate charge (Qg) of 100nC ensures fast switching performance.
This IGBT is ideal for high-power switching applications, including:
The STGW25H120DF2 stands out as a high-efficiency, rugged IGBT with superior Trench Field Stop technology, making it ideal for high-voltage, high-current applications. Its low conduction losses, fast switching, and thermal performance ensure reliability in industrial, automotive, and renewable energy systems. With RoHS3 compliance and TO-247 packaging, it offers a robust solution for engineers seeking high-performance power switching components.
Download datasheets and manufacturer documentation for STGW25H120DF2