STMicroelectronics

STGW25H120DF2

STGW25H120DF2 Description

The STGW25H120DF2 from STMicroelectronics is a high-performance 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) housed in a TO-247 package. Designed for robust power switching applications, it features Trench Field Stop technology, ensuring low conduction and switching losses. With a collector-emitter breakdown voltage (V_CES) of 1200V and a maximum collector current (I_C) of 50A, this IGBT is engineered for high-efficiency power conversion. Its low V_CE(on) of 2.6V @ 15V, 25A minimizes power dissipation, while the gate charge (Q_g) of 100nC ensures fast switching performance.

STGW25H120DF2 Features

• Trench Field Stop Technology: Enhances efficiency with reduced conduction losses.
• High Voltage & Current Ratings: 1200V V_CES and 50A I_C (100A pulsed) for demanding applications.
• Low Switching Losses: 29ns/130ns turn-on/off delay at 25°C and 600µJ/700µJ switching energy.
• Low Saturation Voltage: 2.6V @ 15V, 25A improves thermal performance.
• RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
• High Power Handling: 375W maximum power dissipation for rugged operation.

STGW25H120DF2 Applications

This IGBT is ideal for high-power switching applications, including:

• Motor Drives: Efficient control in industrial and automotive systems.
• Uninterruptible Power Supplies (UPS): Reliable high-voltage switching.
• Solar Inverters: Optimized for renewable energy systems.
• Welding Equipment: High-current handling with minimal losses.
• Induction Heating: Fast switching for precision thermal management.

Conclusion of STGW25H120DF2

The STGW25H120DF2 stands out as a high-efficiency, rugged IGBT with superior Trench Field Stop technology, making it ideal for high-voltage, high-current applications. Its low conduction losses, fast switching, and thermal performance ensure reliability in industrial, automotive, and renewable energy systems. With RoHS3 compliance and TO-247 packaging, it offers a robust solution for engineers seeking high-performance power switching components.