The STGW40M120DF3 from STMicroelectronics is a high-performance 1200V, 80A trench field-stop IGBT designed for demanding power electronics applications. Packaged in a TO-247 through-hole format, it delivers a maximum power dissipation of 468W, making it ideal for high-efficiency switching systems. With a low collector-emitter saturation voltage (Vce(on)) of 2.3V @ 15V, 40A, it ensures minimal conduction losses, while its fast switching characteristics (td(on/off) of 35ns/140ns) enhance performance in high-frequency circuits. The device features a gate charge of 125nC and switching energy of 1.5mJ (on) / 2.25mJ (off), optimizing it for energy-efficient operation.
STGW40M120DF3 Features
High Voltage & Current Rating: 1200V breakdown voltage and 80A continuous current (160A pulsed) for robust power handling.
Low Losses: Trench Field Stop technology reduces conduction and switching losses, improving efficiency.
Fast Switching: Optimized turn-on/off times (35ns/140ns) for high-frequency applications.
Reliability: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for long-term durability.
Standard Input Type: Simplifies drive circuit design compared to niche gate requirements.
STGW40M120DF3 Applications
This IGBT excels in:
Motor Drives & Inverters: High efficiency and fast switching suit variable-speed motor control.
Uninterruptible Power Supplies (UPS): Robust voltage handling ensures stable energy conversion.
Renewable Energy Systems: Solar inverters and wind turbine converters benefit from low-loss operation.
Industrial SMPS: High-power switch-mode power supplies leverage its thermal and electrical performance.
Welding Equipment: Demanding pulsed-current applications utilize its high Icm (160A) capability.
Conclusion of STGW40M120DF3
The STGW40M120DF3 stands out as a high-reliability, high-efficiency IGBT for industrial and renewable energy applications. Its optimized switching performance, low Vce(on), and rugged TO-247 package make it superior to conventional IGBTs in terms of thermal management and energy savings. Engineers designing high-power, high-frequency systems will find it an ideal solution for balancing performance and cost.
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Tech Specifications
Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Package / Case
Technology
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Package Length
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Gate-Emitter Leakage Current
RoHS
Minimum Operating Temperature
Continuous Collector Current Ic Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Maximum Gate Emitter Voltage
STGW40M120DF3 Documents
Download datasheets and manufacturer documentation for STGW40M120DF3
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