The STGWT40H65DFB is a high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and renewable energy systems.
The STGWT40H65DFB is a N-channel enhancement mode MOSFET with a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 40A. It features a low on-state resistance (RDS(on)) of 45 mΩ max, which helps to minimize power dissipation and improve efficiency in switching applications.
The STGWT40H65DFB is well-suited for use in a variety of power electronics applications, including:
Overall, the STGWT40H65DFB is a versatile and high-performance MOSFET that offers excellent electrical characteristics and reliability for use in a wide range of power electronics applications.
Download datasheets and manufacturer documentation for STGWT40H65DFB