STMicroelectronics

STGWT80H65DFB  

Single IGBTs

STGWT80H65DFB Description

The STGWT80H65DFB is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter breakdown voltage of 650V and a maximum collector current of 120A, this device is ideal for demanding power electronics applications.

STGWT80H65DFB Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 85 ns
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Gate Charge: 414 nC
  • Power - Max: 469 W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Td (on/off) @ 25°C: 84ns/280ns

• Performance Benefits:

  • Trench Field Stop IGBT technology for improved switching performance and reduced conduction losses
  • Low reverse recovery time for fast switching applications
  • High power handling capability (469W) for demanding power electronics applications

• Compliance and Packaging:

  • REACH Unaffected
  • ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Package: Tube

STGWT80H65DFB Applications

The STGWT80H65DFB is well-suited for a variety of high-power applications, including:

1. Industrial Motor Control: Due to its high voltage and current ratings, this IGBT is ideal for motor control applications in industrial settings, such as variable frequency drives (VFDs) and electric vehicle (EV) motor controllers.

2. Power Supplies: The device's high power handling capability makes it suitable for high-power switching applications in power supplies, such as uninterruptible power supplies (UPS) and solar inverters.

3. Renewable Energy Systems: With its ability to handle high voltages and currents, the STGWT80H65DFB is an excellent choice for power electronics in renewable energy systems, such as wind turbines and solar power generation systems.

Conclusion of STGWT80H65DFB

The STGWT80H65DFB from STMicroelectronics is a high-performance IGBT designed for demanding power electronics applications. Its unique features, such as Trench Field Stop technology, low reverse recovery time, and high power handling capability, make it an ideal choice for applications like industrial motor control, power supplies, and renewable energy systems. With its compliance to REACH and RoHS standards, the STGWT80H65DFB is a reliable and environmentally friendly solution for high-power electronics applications.

STGWT80H65DFB Documents

Download datasheets and manufacturer documentation for STGWT80H65DFB

PCN Assembly/Origin :

IGBT/IPM TFS A/T Add 22/Oct/2021      

Datasheets :

STGW80H65DFB, STGWT80H65DFB      

HTML Datasheet :

STGW80H65DFB, STGWT80H65DFB