German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STI23NM60N
278-STI23NM60N
PDF Datasheet
19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
19A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
600V
Fall Time
36ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.05nF
STI23NM60N Description
N-Channel 600 V 19A (Tc) 150W (Tc) Through Hole I2PAK
FAQ
What is STI23NM60N?
STI23NM60N is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is STI23NM60N currently in stock?
What is the mounting type of STI23NM60N?
What package or case is STI23NM60N available in?
What operating temperature range does STI23NM60N support?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
