Texas Instruments_CSD85301Q2

Texas Instruments
CSD85301Q2  
FET, MOSFET Arrays

Texas Instruments
CSD85301Q2
289-CSD85301Q2
Ersa
Texas Instruments-CSD85301Q2-datasheets-8228962.pdf
MOSFET 2N-CH 20V 5A 6WSON
In Stock : 7356

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

CSD85301Q2 Description

The Texas Instruments CSD85301Q2 is a highly-integrated, high-voltage half-bridge gate driver that is specifically designed for use in motor control applications. It is a member of the company's portfolio of power management solutions, which are known for their high performance and reliability.

Description:

The CSD85301Q2 is a monolithic half-bridge gate driver that provides high-voltage side current sensing and protection. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including motor control, automotive, and industrial systems. The device is available in a compact 16-pin QFN package, which makes it easy to integrate into a variety of systems.

Features:

Some of the key features of the CSD85301Q2 include:

  1. High-voltage operation: The device can operate at supply voltages up to 18V, making it suitable for a wide range of applications.
  2. High-voltage side current sensing: The device provides accurate current sensing on the high-voltage side, which can be used for protection and control purposes.
  3. Advanced protection features: The CSD85301Q2 includes a range of protection features, including overcurrent protection, short-circuit protection, and thermal shutdown.
  4. Low quiescent current: The device has a low quiescent current, which helps to minimize power consumption in motor control applications.
  5. Wide operating temperature range: The CSD85301Q2 can operate over a wide temperature range of -40°C to +125°C, making it suitable for use in harsh environments.

Applications:

The CSD85301Q2 is suitable for use in a wide range of applications, including:

  1. Motor control: The device can be used to drive power MOSFETs and IGBTs in motor control applications, such as brushless DC motors, stepper motors, and induction motors.
  2. Automotive: The CSD85301Q2 can be used in automotive applications, such as electric power steering and electric vehicle motor control.
  3. Industrial systems: The device can be used in industrial systems, such as robotics, conveyor systems, and manufacturing equipment.
  4. Power supplies: The CSD85301Q2 can be used in power supply applications, such as battery chargers and power adapters.

In summary, the Texas Instruments CSD85301Q2 is a highly-integrated, high-voltage half-bridge gate driver that is designed for use in motor control applications. It offers a range of features, including high-voltage side current sensing, advanced protection features, and a low quiescent current. The device is suitable for use in a wide range of applications, including motor control, automotive, and industrial systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
PCB changed
HTS
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Typical Gate Plateau Voltage (V)
Material
Package Length
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Power - Max
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD85301Q2 Documents

Download datasheets and manufacturer documentation for CSD85301Q2

Ersa CSDYYY 01/Feb/2019      
Ersa CSD85301Q2      
Ersa CSD85301Q2      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service