Texas Instruments_CSD88539ND

Texas Instruments
CSD88539ND  
FET, MOSFET Arrays

Texas Instruments
CSD88539ND
289-CSD88539ND
Ersa
Texas Instruments-CSD88539ND-datasheets-7060888.pdf
MOSFET 2N-CH 60V 15A 8SOIC
In Stock : 3206

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $0.67730
    • $0.68
    • 10+
    • $0.56470
    • $5.65
    • 30+
    • $0.50839
    • $15.25
    ADD TO CART
    QUICK ORDER
    $0.67730    $0.68
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    CSD88539ND Description

    The CSD88539ND is a highly-integrated gate driver from Texas Instruments, designed for use in high voltage motor control applications. It is a member of the Silicon Carbide (SiC) MOSFET family, which offers several advantages over traditional silicon-based devices, including higher efficiency, faster switching speeds, and better thermal performance.

    Description:

    The CSD88539ND is a monolithic gate driver that integrates the necessary components to drive high voltage SiC MOSFETs in a three-phase motor control application. It features a high voltage capability of up to 900V and can handle a continuous output current of 2A. The device is available in a compact QFN package, making it suitable for space-constrained applications.

    Features:

    1. High voltage capability: The CSD88539ND can handle voltages up to 900V, making it suitable for a wide range of motor control applications.
    2. High efficiency: The device uses SiC MOSFETs, which offer higher efficiency and faster switching speeds compared to traditional silicon-based devices.
    3. Integrated gate driver: The CSD88539ND integrates the necessary gate driver components, simplifying the overall system design and reducing the number of external components required.
    4. Compact package: The device is available in a small QFN package, making it suitable for space-constrained applications.
    5. Thermal performance: SiC MOSFETs offer better thermal performance compared to silicon-based devices, allowing for more efficient heat dissipation and potentially smaller cooling solutions.
    6. Protection features: The CSD88539ND includes various protection features, such as overcurrent protection, overvoltage protection, and undervoltage lockout, to ensure reliable operation.

    Applications:

    1. Electric vehicle (EV) motor control: The high efficiency and fast switching speeds of the CSD88539ND make it well-suited for driving the high voltage SiC MOSFETs in EV motor control applications.
    2. Industrial motor control: The device can be used in a variety of industrial motor control applications, such as robotics, conveyor systems, and pumps, where high efficiency and fast switching speeds are important.
    3. Renewable energy systems: The CSD88539ND can be used in motor control applications for renewable energy systems, such as wind turbines and solar inverters, where high efficiency and reliability are critical.
    4. Aerospace applications: The compact size and high efficiency of the CSD88539ND make it suitable for motor control applications in aerospace systems, where space and weight are at a premium.
    5. High voltage power supplies: The device can be used in high voltage power supply applications, such as battery chargers and power conversion systems, where fast switching speeds and high efficiency are important.

    Tech Specifications

    Unit Weight
    VDS (V)
    QGD (typ) (nC)
    Configuration
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    ID - package limited (A)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    EU RoHS
    Carrier
    Rds(on) at VGS=10 V (max) (mΩ)
    Rds On - Drain-Source Resistance
    VGSTH typ (typ) (V)
    ID - silicon limited at TC=25°C (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Operating temperature range (°C)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Pins
    USHTS
    Category
    Logic level
    PCB changed
    HTS
    Rating
    ECCN (US)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    QG (typ) (nC)
    Package Height
    Mfr
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    QGS (typ) (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    REACH
    Series
    Type
    Length
    Power - Max
    Part Status
    Lead finish / Ball material
    Package Width
    Pd - Power Dissipation
    VGS (V)
    Base Product Number

    CSD88539ND Documents

    Download datasheets and manufacturer documentation for CSD88539ND

    Ersa CSD88539ND      
    Ersa CSD88539ND      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service