Texas Instruments_TPS1120DR

Texas Instruments
TPS1120DR  
FET, MOSFET Arrays

Texas Instruments
TPS1120DR
289-TPS1120DR
Ersa
Texas Instruments-TPS1120DR-datasheets-10378578.pdf
MOSFET 2P-CH 15V 1.17A 8SOIC
In Stock : 2598

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TPS1120DR Description

TPS1120DR Description

The TPS1120DR is a high-performance MOSFET (Metal Oxide) device from Texas Instruments, designed for applications requiring efficient power management and control. This product is part of the MOSFET Arrays category and is currently active in the market. With a maximum drain-to-source voltage (Vdss) of 15V and a continuous drain current (Id) of 1.17A at 25°C, the TPS1120DR is capable of handling demanding power requirements.

TPS1120DR Features

  • Logic Level Gate: The TPS1120DR features a logic level gate, enabling compatibility with standard logic level signals for easy integration into existing systems.
  • Low Gate Charge (Qg): With a maximum gate charge of 5.45nC @ 10V, the TPS1120DR reduces power dissipation and improves overall efficiency.
  • Low Rds On: The maximum Rds On of 180mOhm @ 1.5A, 10V ensures low on-resistance, minimizing power losses and heat generation.
  • Surface Mount Technology: The TPS1120DR is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • Compliance: This product is REACH Unaffected and RoHS3 Compliant, ensuring environmental and regulatory compliance.

TPS1120DR Applications

The TPS1120DR is ideal for a variety of applications where efficient power management and control are critical. Some specific use cases include:

  • Power Management Systems: The TPS1120DR's low Rds On and high Vdss make it suitable for power management systems in consumer electronics, industrial equipment, and automotive applications.
  • Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as in robotics and automation systems.
  • Battery Protection Circuits: The TPS1120DR can be used in battery protection circuits to prevent overcharging and discharging, ensuring battery longevity and safety.

Conclusion of TPS1120DR

The TPS1120DR from Texas Instruments is a versatile MOSFET device that offers a combination of high performance, low power dissipation, and compliance with environmental regulations. Its unique features, such as the logic level gate and low Rds On, make it an ideal choice for a wide range of applications, including power management systems, motor control, and battery protection circuits. With its robust performance and reliability, the TPS1120DR is a valuable addition to any electronics design.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Power - Max
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

TPS1120DR Documents

Download datasheets and manufacturer documentation for TPS1120DR

Ersa TPS1120, TPS1120Y      
Ersa TPS1120, TPS1120Y      
Ersa Design 25/Feb/2022      

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