Texas Instruments_TPS1120DR
original

Texas Instruments
TPS1120DR

289-TPS1120DR
PDF Datasheet
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC
6 Weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
1.17A
Current Rating
-1.17A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
15V
Fall Time
10ns
Gate to Source Voltage (Vgs)
2V
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TPS1120DR Description

TPS1120DR Description

The TPS1120DR is a high-performance MOSFET (Metal Oxide) device from Texas Instruments, designed for applications requiring efficient power management and control. This product is part of the MOSFET Arrays category and is currently active in the market. With a maximum drain-to-source voltage (Vdss) of 15V and a continuous drain current (Id) of 1.17A at 25°C, the TPS1120DR is capable of handling demanding power requirements.

TPS1120DR Features

  • Logic Level Gate: The TPS1120DR features a logic level gate, enabling compatibility with standard logic level signals for easy integration into existing systems.
  • Low Gate Charge (Qg): With a maximum gate charge of 5.45nC @ 10V, the TPS1120DR reduces power dissipation and improves overall efficiency.
  • Low Rds On: The maximum Rds On of 180mOhm @ 1.5A, 10V ensures low on-resistance, minimizing power losses and heat generation.
  • Surface Mount Technology: The TPS1120DR is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • Compliance: This product is REACH Unaffected and RoHS3 Compliant, ensuring environmental and regulatory compliance.

TPS1120DR Applications

The TPS1120DR is ideal for a variety of applications where efficient power management and control are critical. Some specific use cases include:

  • Power Management Systems: The TPS1120DR's low Rds On and high Vdss make it suitable for power management systems in consumer electronics, industrial equipment, and automotive applications.
  • Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as in robotics and automation systems.
  • Battery Protection Circuits: The TPS1120DR can be used in battery protection circuits to prevent overcharging and discharging, ensuring battery longevity and safety.

Conclusion of TPS1120DR

The TPS1120DR from Texas Instruments is a versatile MOSFET device that offers a combination of high performance, low power dissipation, and compliance with environmental regulations. Its unique features, such as the logic level gate and low Rds On, make it an ideal choice for a wide range of applications, including power management systems, motor control, and battery protection circuits. With its robust performance and reliability, the TPS1120DR is a valuable addition to any electronics design.

FAQ

What is TPS1120DR?
TPS1120DR is a FET, MOSFET Arrays from Texas Instruments. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for TPS1120DR?
Are there related or alternative parts for TPS1120DR?
Does TPS1120DR have quantity-based pricing?
Is TPS1120DR currently in stock?
Availability (In Stock : 22 )
Quantity Unit Price Ext. Price
1+ $4.78972 $4.79
10+ $4.23772 $42.38
30+ $3.95657 $118.70
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