Texas Instruments_CSD87502Q2T

Texas Instruments
CSD87502Q2T  
FET, MOSFET Arrays

Texas Instruments
CSD87502Q2T
289-CSD87502Q2T
Ersa
Texas Instruments-CSD87502Q2T-datasheets-6613058.pdf
MOSFET 2N-CH 30V 5A 6WSON
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CSD87502Q2T Description

CSD87502Q2T Description

The CSD87502Q2T is a NexFET™ series MOSFET (Metal Oxide) developed by Texas Instruments. It is a 2N-channel, 30V, 5A MOSFET with a logic level gate and 5V drive. This surface-mount device is designed for high-performance applications and offers several unique features and advantages over similar models.

CSD87502Q2T Features

  • Logic Level Gate, 5V Drive: The CSD87502Q2T features a logic level gate that can be driven with a 5V signal, making it compatible with most microcontrollers and digital logic circuits.
  • Low Input Capacitance (Ciss): With a maximum input capacitance of 353pF at 15V, this MOSFET offers fast switching speeds and low power consumption.
  • Low Gate Charge (Qg): The maximum gate charge is 6nC at 10V, which contributes to the device's fast switching performance.
  • Low Rds On: With a maximum Rds On of 32.4mOhm at 4A and 10V, the CSD87502Q2T provides low on-resistance and high efficiency.
  • High Drain to Source Voltage (Vdss): This MOSFET can handle a maximum drain to source voltage of 30V, making it suitable for high-voltage applications.
  • High Current - Continuous Drain (Id): The CSD87502Q2T can handle a continuous drain current of up to 5A at 25°C, making it ideal for high-current applications.
  • RoHS3 Compliant: This device is compliant with the RoHS3 directive, making it suitable for use in environmentally friendly products.

CSD87502Q2T Applications

The CSD87502Q2T is ideal for a wide range of applications, including:

  1. Power Management: Due to its high current and voltage ratings, this MOSFET is well-suited for power management applications, such as battery protection circuits and power converters.
  2. Motor Control: The CSD87502Q2T's high current and voltage ratings make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
  3. Automotive Applications: This MOSFET's ability to handle high voltages and currents, combined with its low gate charge, makes it suitable for automotive applications, such as electric vehicle charging systems and power windows.
  4. Industrial Control: The CSD87502Q2T's high performance and reliability make it ideal for industrial control applications, such as motor drives and power supplies.

Conclusion of CSD87502Q2T

The CSD87502Q2T is a high-performance NexFET™ series MOSFET from Texas Instruments, offering a unique combination of high current and voltage ratings, low on-resistance, and fast switching speeds. Its compatibility with logic level gate drives and RoHS3 compliance make it an excellent choice for a wide range of applications, including power management, motor control, automotive systems, and industrial control. With its advanced features and performance benefits, the CSD87502Q2T stands out as a superior option in the MOSFET market.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Typical Turn-On Delay Time
REACH Status
Channel Type
Rds(on) at VGS=10 V (max) (mΩ)
Maximum Continuous Drain Current (A)
VGSTH typ (typ) (V)
Operating temperature range (°C)
Maximum Drain Source Voltage (V)
Rds On (Max) @ Id, Vgs
Standard Package Name
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Vgs th - Gate-Source Threshold Voltage
Package
Logic level
Qg - Gate Charge
Package Height
Maximum Operating Temperature
Width
RoHS Status
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Length
Power - Max
Part Status
Maximum Gate Threshold Voltage (V)
Lead finish / Ball material
Package Width
VGS (V)
VDS (V)
QGD (typ) (nC)
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
ID - package limited (A)
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Carrier
Rds On - Drain-Source Resistance
ID - silicon limited at TC=25°C (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
MSL rating / Peak reflow
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Lead Shape
HTSUS
Pins
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
Rating
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
QG (typ) (nC)
Typical Fall Time (ns)
Mfr
Height
Mounting Style
Rds(on) at VGS=4.5 V (max) (mΩ)
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
QGS (typ) (nC)
REACH
Series
Operating Junction Temperature (°C)
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number

CSD87502Q2T Documents

Download datasheets and manufacturer documentation for CSD87502Q2T

Ersa CSDYYY 01/Feb/2019      
Ersa CSD87502Q2 Datasheet      
Ersa CSD87502Q2 Datasheet      

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