Texas Instruments_CSD87334Q3D

Texas Instruments
CSD87334Q3D  
FET, MOSFET Arrays

Texas Instruments
CSD87334Q3D
289-CSD87334Q3D
Ersa
Texas Instruments-CSD87334Q3D-datasheets-8738847.pdf
MOSFET 2N-CH 30V 20A 8VSON
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CSD87334Q3D Description

CSD87334Q3D Description

The CSD87334Q3D is a high-performance MOSFET from Texas Instruments, designed for applications requiring robust power handling and efficient switching. This NexFET™ series device features a 2N-channel, 30V drain-to-source voltage, and can handle a continuous drain current of 20A at 25°C. With a maximum power rating of 6W, the CSD87334Q3D is well-suited for a variety of power electronic applications.

CSD87334Q3D Features

  • Logic Level Gate: The CSD87334Q3D is designed to work with logic level gate signals, making it compatible with a wide range of control systems.
  • Low Input Capacitance: With a maximum input capacitance of 1260pF at 15V, this MOSFET offers fast switching performance and reduced power consumption.
  • Low Gate Charge: The maximum gate charge of 8.3nC at 4.5V contributes to the device's high-speed switching capabilities.
  • Low Rds(on): The CSD87334Q3D boasts a low on-resistance of 6mOhm at 12A and 8V, which helps minimize power losses during operation.
  • Surface Mount: This device is designed for surface mount applications, allowing for compact and efficient PCB layouts.
  • ROHS3 Compliant: The CSD87334Q3D meets the stringent environmental requirements of the RoHS directive, making it suitable for use in green electronics.

CSD87334Q3D Applications

The CSD87334Q3D is ideal for a variety of applications where high power handling and efficient switching are required. Some specific use cases include:

  • Motor Control: The high current and voltage ratings make this MOSFET suitable for driving motors in industrial and automotive applications.
  • Power Supplies: The CSD87334Q3D can be used in power supply designs, particularly in applications requiring high efficiency and low power losses.
  • Renewable Energy Systems: This MOSFET's robust performance characteristics make it well-suited for use in solar inverters and other renewable energy systems.

Conclusion of CSD87334Q3D

The CSD87334Q3D is a powerful and efficient MOSFET from Texas Instruments, offering a combination of high power handling, fast switching, and low on-resistance. Its compatibility with logic level gate signals, low input capacitance, and low gate charge make it an excellent choice for a wide range of power electronic applications. With its surface mount design and RoHS compliance, the CSD87334Q3D is a versatile and environmentally friendly solution for demanding power electronic designs.

Tech Specifications

Category
Configuration
PCB changed
HTS
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
ECCN (US)
PPAP
Product Status
Supplier Device Package
Automotive
Minimum Operating Temperature (°C)
Drain to Source Voltage (Vdss)
Maximum Operating Temperature (°C)
Supplier Package
Package / Case
Technology
REACH Status
Package Height
Mfr
EU RoHS
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
SVHC Exceeds Threshold
ECCN
Package Length
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Series
Lead Shape
Power - Max
Current - Continuous Drain (Id) @ 25°C
Part Status
SVHC
HTSUS
Package
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

CSD87334Q3D Documents

Download datasheets and manufacturer documentation for CSD87334Q3D

Ersa CSDYYY 13/Feb/2017      
Ersa CSD87334Q3D Datasheet      
Ersa CSD87334Q3D Datasheet      

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