Texas Instruments_TPD2E001DZDR

Texas Instruments
TPD2E001DZDR  
TVS Diodes

Texas Instruments
TPD2E001DZDR
144-TPD2E001DZDR
Ersa
Texas Instruments-TPD2E001DZDR-datasheets-11449161.pdf
TVS DIODE 5.5VWM 4SOP
In Stock : 33477

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TPD2E001DZDR Description

TPD2E001DZDR is a high-voltage, high-side gate driver IC from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including motor control, power management, and renewable energy systems.

Description:

The TPD2E001DZDR is a monolithic high-voltage gate driver IC that provides high-side and low-side gate drive for power MOSFETs and IGBTs. It features a high-voltage bootstrap supply that allows it to drive gates with voltages up to 60V higher than its supply voltage. The device also includes built-in protection features such as overcurrent protection, undervoltage lockout, and thermal shutdown.

Features:

  • High-voltage gate drive for power MOSFETs and IGBTs
  • High-side and low-side gate drive
  • Bootstrap supply for driving gates with voltages up to 60V higher than the supply voltage
  • Overcurrent protection
  • Undervoltage lockout
  • Thermal shutdown
  • Small package size (SOIC-8)

Applications:

The TPD2E001DZDR is suitable for a wide range of applications that require high-voltage gate drive, including:

  1. Motor control: The device can be used to drive the high-side and low-side gates of power MOSFETs or IGBTs in motor control applications, such as in electric vehicles, industrial motor drives, and robotics.
  2. Power management: The device can be used to drive power MOSFETs and IGBTs in power management applications, such as in battery management systems, power supplies, and solar inverters.
  3. Renewable energy systems: The device can be used to drive power MOSFETs and IGBTs in renewable energy systems, such as in wind turbines, solar power systems, and energy storage systems.

Overall, the TPD2E001DZDR is a versatile and reliable high-voltage gate driver IC that can be used in a wide range of applications requiring high-voltage gate drive. Its built-in protection features make it a safe and reliable choice for demanding applications.

Tech Specifications

Peak Pulse Power Dissipation (W)
Unit Weight
Current - Peak Pulse (10/1000µs)
Configuration
Vrwm (V)
PPAP
Interface type
Bi-/uni-directional
Maximum Reverse Leakage Current (uA)
Product Status
Power - Peak Pulse
Automotive
RoHS
Supplier Package
Package / Case
Number of Channels
Vesd - Voltage ESD Contact
REACH Status
Unidirectional Channels
Fail Safe Protection
IEC 61000-4-2 contact (±V)
EU RoHS
Carrier
Moisture Sensitivity Level (MSL)
Operating Temperature
Ipp - Peak Pulse Current
Operating temperature range (°C)
Termination Style
Capacitance Value (pF)
ECCN
MSL rating / Peak reflow
Mounting Type
Standard Package Name
Pin Count
Mounting
IO capacitance (typ) (pF)
Package name
Lead Shape
Clamping Voltage
HTSUS
Package
Pins
USHTS
PCB changed
HTS
Number of Elements per Chip
Cd - Diode Capacitance
Rating
ECCN (US)
Minimum Breakdown Voltage (V)
Breakdown voltage (min) (V)
Voltage - Breakdown (Min)
Supplier Device Package
Direction Type
Minimum Operating Temperature (°C)
Peak pulse power (8/20 μs) (max) (W)
Maximum Peak Pulse Current (A)
Maximum Operating Temperature (°C)
Voltage - Clamping (Max) @ Ipp
Dynamic resistance (typ)
Voltage - Reverse Standoff (Typ)
Package Height
Mfr
Breakdown Voltage
Polarity
Maximum Operating Temperature
Test Current (mA)
Vesd - Voltage ESD Air Gap
RoHS Status
Power Line Protection
Number of channels
IO leakage current (max) (nA)
Applications
Capacitance @ Frequency
Clamping voltage (V)
Working Voltage
Package Length
Maximum Working Voltage (V)
Minimum Operating Temperature
REACH
Series
Type
Part Status
Maximum Clamping Voltage (V)
Lead finish / Ball material
Package Width
Base Product Number

TPD2E001DZDR Documents

Download datasheets and manufacturer documentation for TPD2E001DZDR

Ersa TPD2E001      
Ersa TPD2E001      

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