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Vishay
IRF9510STRRPBF
278-IRF9510STRRPBF
PDF Datasheet
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Tech Specifications
Continuous Drain Current (ID)
4A
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
-100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Length
10.41mm
Max Operating Temperature
175°C
IRF9510STRRPBF Description
Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
FAQ
What voltage specification is listed for IRF9510STRRPBF?
The listed voltage-related specification for IRF9510STRRPBF is -100V.
Are there related or alternative parts for IRF9510STRRPBF?
What package or case is IRF9510STRRPBF available in?
What is IRF9510STRRPBF?
What is the mounting type of IRF9510STRRPBF?
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