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Vishay
IRFB20N50K
278-IRFB20N50K
PDF Datasheet
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Tech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
20A
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
500V
Fall Time
23ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Length
10.41mm
IRFB20N50K Description
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAQ
What voltage specification is listed for IRFB20N50K?
The listed voltage-related specification for IRFB20N50K is 500V.
Is IRFB20N50K currently in stock?
What operating temperature range does IRFB20N50K support?
What package or case is IRFB20N50K available in?
What is the mounting type of IRFB20N50K?
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