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SIE808DF-T1-E3
2088-SIE808DF-T1-E3
PDF Datasheet
N-CH MOSFET 20V 45A 1.6mR TrenchFET Surface Mount
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Tech Specifications
Continuous Drain Current (ID)
45A
Drain to Source Resistance
1.6mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
1.6mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
0.8mm
Input Capacitance
8.8nF
SIE808DF-T1-E3 Description
N-CH MOSFET 20V 45A 1.6mR TrenchFET Surface Mount
FAQ
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