Vishay
SIHB12N65E-GE3
278-SIHB12N65E-GE3
PDF Datasheet
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
18 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-263-3
Continuous Drain Current (ID)
12A
Drain to Source Resistance
392mR
Drain to Source Voltage (Vdss)
650V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.224nF
Lead Free
Lead Free
SIHB12N65E-GE3 Description
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
FAQ
What is the standard lead time for SIHB12N65E-GE3?
The standard lead time for SIHB12N65E-GE3 is 18 weeks.
Is SIHB12N65E-GE3 currently in stock?
Are there related or alternative parts for SIHB12N65E-GE3?
What operating temperature range does SIHB12N65E-GE3 support?
What is SIHB12N65E-GE3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
