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SIHB15N60E-GE3
278-SIHB15N60E-GE3
PDF Datasheet
600V 15A N-CH MOSFET D2PAK, 280mR Rds(on)
18 weeks
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Tech Specifications
Package/Case
D2PAK
Continuous Drain Current (ID)
15A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
280mR
Fall Time
66ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
SIHB15N60E-GE3 Description
600V 15A N-CH MOSFET D2PAK, 280mR Rds(on)
FAQ
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