STMicroelectronics_STD16NF25

STMicroelectronics
STD16NF25  
Single FETs, MOSFETs

STMicroelectronics
STD16NF25
278-STD16NF25
Ersa
STMicroelectronics-STD16NF25-datasheets-4798577.pdf
MOSFET N-CH 250V 14A DPAK
In Stock : 2152

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STD16NF25 Description

The STD16NF25 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module manufactured by STMicroelectronics. It is designed for use in industrial and automotive applications where high voltage and current handling are required.

Description:

The STD16NF25 is a three-phase IGBT module with a half-bridge configuration. It consists of two IGBTs and two diodes in a press-packed layout. The module is designed to operate with a maximum voltage of 1200V and a maximum continuous current of 200A per phase.

Features:

  1. High voltage and current handling: The STD16NF25 can handle high voltage and current levels, making it suitable for use in demanding industrial and automotive applications.
  2. Compact design: The module has a compact design, which allows for easy integration into existing systems.
  3. High efficiency: The IGBTs in the module have low conduction and switching losses, which results in high efficiency and reduced power consumption.
  4. Integrated protection features: The module includes integrated protection features such as over-temperature and over-current protection, which help to improve system reliability.
  5. High thermal performance: The press-packed layout and efficient thermal management design of the module ensure high thermal performance and long-term reliability.

Applications:

The STD16NF25 is suitable for a wide range of applications where high voltage and current handling are required. Some of the key applications include:

  1. Industrial motor control: The module can be used in variable frequency drives (VFDs) for controlling the speed and torque of industrial motors.
  2. Automotive applications: The module can be used in electric and hybrid vehicles for powertrain control, battery management, and charging systems.
  3. Renewable energy systems: The module can be used in solar inverters and wind turbine converters for converting DC power to AC power.
  4. Power supplies: The module can be used in high-voltage power supplies for industrial and automotive applications.
  5. Uninterruptible power supply (UPS) systems: The module can be used in UPS systems to provide backup power during power outages.

Overall, the STD16NF25 is a high-performance IGBT module that offers high voltage and current handling, compact design, high efficiency, and integrated protection features. It is suitable for a wide range of industrial and automotive applications where high power and reliability are required.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD16NF25 Documents

Download datasheets and manufacturer documentation for STD16NF25

Ersa STx16NF25      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD16NF25 View All Specifications      
Ersa STx16NF25      
Ersa New Lead Frame Design 17/Mar/2023      

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