Vishay_SIHB190N65E-GE3
Vishay_SIHB190N65E-GE3
original

Vishay
SIHB190N65E-GE3

2088-SIHB190N65E-GE3
PDF Datasheet
MOSFETs
21 Weeks

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Tech Specifications

Mounting Style
SMD/SMT
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Id - Continuous Drain Current
20 A
ECCN
EAR99
Transistor Polarity
N-Channel
Channel Mode
Enhancement
Qg - Gate Charge
33 nC
Minimum Operating Temperature
- 55 C
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SIHB190N65E-GE3 Description

MOSFETs

FAQ

Are there related or alternative parts for SIHB190N65E-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for SIHB190N65E-GE3?
What operating temperature range does SIHB190N65E-GE3 support?
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