


Vishay
SIHB22N65E-GE3
278-SIHB22N65E-GE3
PDF Datasheet
MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
18 weeks
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Responsible qualityTech Specifications
Package/Case
TO-263
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
650V
Fall Time
38ns
Gate to Source Voltage (Vgs)
4V
Input Capacitance
2.415nF
SIHB22N65E-GE3 Description
MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
FAQ
What is the mounting type of SIHB22N65E-GE3?
SIHB22N65E-GE3 uses a Surface Mount mounting style based on the listed product specifications.
Are there related or alternative parts for SIHB22N65E-GE3?
What package or case is SIHB22N65E-GE3 available in?
Is SIHB22N65E-GE3 currently in stock?
What operating temperature range does SIHB22N65E-GE3 support?



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