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SIHB28N60EF-GE3
278-SIHB28N60EF-GE3
PDF Datasheet
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
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Tech Specifications
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
RoHS
Yes
REACH
Compliant
Military Spec
False
SIHB28N60EF-GE3 Description
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
FAQ
What is SIHB28N60EF-GE3?
SIHB28N60EF-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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