


Vishay
SIHB30N60ET5-GE3
278-SIHB30N60ET5-GE3
PDF Datasheet
Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK
18 weeks
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Responsible qualityTech Specifications
Typical Input Capacitance @ Vds (pF)
2600@100V
Category
Power MOSFET
Configuration
Single
PCB changed
2
Typical Turn-Off Delay Time (ns)
63
HTS
EA
Maximum Gate Source Leakage Current (nA)
100
Number of Elements per Chip
1
SIHB30N60ET5-GE3 Description
Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK
FAQ
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SIHB30N60ET5-GE3 is currently available on an inquiry basis. Please contact us for the latest stock information.
What operating temperature range does SIHB30N60ET5-GE3 support?
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