Vishay_SIHB30N60ET5-GE3
original

Vishay
SIHB30N60ET5-GE3

278-SIHB30N60ET5-GE3
PDF Datasheet
Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK
18 weeks

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Tech Specifications

Typical Input Capacitance @ Vds (pF)
2600@100V
Category
Power MOSFET
Configuration
Single
PCB changed
2
Typical Turn-Off Delay Time (ns)
63
HTS
EA
Maximum Gate Source Leakage Current (nA)
100
Number of Elements per Chip
1
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SIHB30N60ET5-GE3 Description

Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK

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