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Tech Specifications
PCB changed
2
Maximum Gate Source Voltage (V)
±30
Maximum Drain Source Voltage (V)
800
HTS
EA
Maximum Drain Source Resistance (mOhm)
940@10V
ECCN (US)
EAR99
PPAP
No
Package Length
10.41(Max)
SIHB6N80E-GE3 Description
E Series Power MOSFET
FAQ
What is SIHB6N80E-GE3?
SIHB6N80E-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does SIHB6N80E-GE3 support?
What voltage specification is listed for SIHB6N80E-GE3?
Is SIHB6N80E-GE3 currently in stock?
What is the standard lead time for SIHB6N80E-GE3?
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