Vishay_SIHD12N50E-GE3
original

Vishay
SIHD12N50E-GE3

278-SIHD12N50E-GE3
PDF Datasheet
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
18 weeks

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Tech Specifications

Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Number of Elements
1
RoHS
Yes
REACH
Compliant
Military Spec
False

SIHD12N50E-GE3 Description

Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

FAQ

What is SIHD12N50E-GE3?
SIHD12N50E-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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