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Vishay

SIHF12N65E-GE3

Name: SIHF12N65E-GE3
Brand: Vishay
SKU: 278-SIHF12N65E-GE3

Manufacturer:

Vishay

ERSA Part #:

278-SIHF12N65E-GE3

Datasheet:

PDF Datasheet

Description:

Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3

Standard Lead Time:

18 weeks

RoHS Status:

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Tech Specifications

Package/Case

TO-220-3

Continuous Drain Current (ID)

12A

Drain to Source Resistance

392mR

Drain to Source Voltage (Vdss)

650V

Fall Time

18ns

Gate to Source Voltage (Vgs)

20V

Input Capacitance

1.224nF

Lead Free

SIHF12N65E-GE3 Description

Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3

FAQ

SIHF12N65E-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.