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SIHG25N50E-GE3
278-SIHG25N50E-GE3
PDF Datasheet
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
18 weeks
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Tech Specifications
Package/Case
TO-247-3
Continuous Drain Current (ID)
26A
Drain to Source Resistance
145mR
Drain to Source Voltage (Vdss)
500V
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.98nF
Max Operating Temperature
150°C
SIHG25N50E-GE3 Description
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
FAQ
Are there related or alternative parts for SIHG25N50E-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What package or case is SIHG25N50E-GE3 available in?
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