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SIHP12N60E-E3
278-SIHP12N60E-E3
PDF Datasheet
600V 12A N-Channel MOSFET, 380mR Rds On, TO-220
13 weeks
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Tech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
380mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
937pF
SIHP12N60E-E3 Description
600V 12A N-Channel MOSFET, 380mR Rds On, TO-220
FAQ
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